Invention Application
US20120135563A1 PROCESS FOR PRODUCING MULTILAYER CHIP ZINC OXIDE VARISTOR CONTAINING PURE SILVER INTERNAL ELECTRODES AND FIRING AT ULTRALOW TEMPERATURE 审中-公开
生产含有纯银内电极的多层芯片氧化锌磁体的方法和超导温度

  • Patent Title: PROCESS FOR PRODUCING MULTILAYER CHIP ZINC OXIDE VARISTOR CONTAINING PURE SILVER INTERNAL ELECTRODES AND FIRING AT ULTRALOW TEMPERATURE
  • Patent Title (中): 生产含有纯银内电极的多层芯片氧化锌磁体的方法和超导温度
  • Application No.: US13298458
    Application Date: 2011-11-17
  • Publication No.: US20120135563A1
    Publication Date: 2012-05-31
  • Inventor: Ching-Hohn LIENJie-An ZHU
  • Applicant: Ching-Hohn LIENJie-An ZHU
  • Applicant Address: TW Guishan Shiang
  • Assignee: SFI Electronics Technology Inc.
  • Current Assignee: SFI Electronics Technology Inc.
  • Current Assignee Address: TW Guishan Shiang
  • Priority: TW099141024 20101126
  • Main IPC: H01L21/02
  • IPC: H01L21/02
PROCESS FOR PRODUCING MULTILAYER CHIP ZINC OXIDE VARISTOR CONTAINING PURE SILVER INTERNAL ELECTRODES AND FIRING AT ULTRALOW TEMPERATURE
Abstract:
A low-temperature firing process is available for cost saving to produce a multilayer chip ZnO varistor containing pure silver (Ag) formed as internal electrodes and calcined at ultralow firing temperature of 850-900° C., which process comprises: a) individually preparing ZnO grains in advance doped with doping ions for promotion of semi-conductivity of ZnO grains if calcined; b) individually preparing a desired high-impedance sintering material to be fired as grain boundaries to encapsulate ZnO grains; c) mixing the doped ZnO grains of Step a) with the high-impedance sintering material of Step b) in a predetermined ratio to form a mixture and proceeding with an initial sintering to have the mixture sintered and ground as composite ZnO ceramic powders, and d) processing the sintered mixture of Step c) to make multilayer chip ZnO varistors containing pure silver (Ag) internal electrodes but sintered at ultralow firing temperature of 850-900° C.
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