公开(公告)号：US20130133183A1

公开(公告)日：2013-05-30

申请号：US13609508

申请日：2012-09-11

Applicant: Ching-Hohn LIEN ,  Jie-An ZHU

Inventor： Ching-Hohn LIEN ,  Jie-An ZHU

IPC: H01C7/02

CPC classification number: C04B35/453 ,  C01G9/02 ,  C01P2002/54 ,  C04B35/624 ,  C04B35/62805 ,  C04B35/62807 ,  C04B35/6281 ,  C04B35/62813 ,  C04B35/62815 ,  C04B35/62818 ,  C04B35/62821 ,  C04B35/62823 ,  C04B35/62826 ,  C04B2235/3203 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3239 ,  C04B2235/3241 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/44 ,  C04B2235/442 ,  C04B2235/443 ,  C04B2235/449 ,  C04B2235/85 ,  H01C7/112 ,  H01C17/06546 ,  Y10T29/49085

Abstract: A process for producing zinc oxide varistor is disclosed to allow that one step of having zinc oxide grains doped with non-equivalent ions and sufficiently semiconductorized and the other one step of preparing sintered powders having property of high-impedance are prepared by two separate procedures respectively, resulted in that the zinc oxide varistor produced by the process features both a high potential gradient and a high non-linearity coefficient; and more particularly the disclosed process is suited for producing a specific zinc oxide varistor whose potential gradient ranges from 2,000 to 9000 V/mm as well as non-linearity coefficient (α) ranges from 21.5 to 55.

Abstract translation: 公开了一种生产氧化锌压敏电阻的方法，可以分别通过两个独立的程序制备具有掺杂有非等效离子并充分半导体化的氧化锌晶粒和制备具有高阻抗特性的烧结粉末的另一步骤 导致由该工艺生产的氧化锌压敏电阻具有高电位梯度和高非线性系数; 更具体地说，所公开的方法适用于制造其电位梯度为2,000至9000V / mm的特定氧化锌变阻器以及非线性系数（α）为21.5至55。

公开(公告)号：US20120135563A1

公开(公告)日：2012-05-31

申请号：US13298458

申请日：2011-11-17

Applicant: Ching-Hohn LIEN ,  Jie-An ZHU

Inventor： Ching-Hohn LIEN ,  Jie-An ZHU

IPC: H01L21/02

CPC classification number: H01C7/112 ,  H01C7/18

Abstract: A low-temperature firing process is available for cost saving to produce a multilayer chip ZnO varistor containing pure silver (Ag) formed as internal electrodes and calcined at ultralow firing temperature of 850-900° C., which process comprises: a) individually preparing ZnO grains in advance doped with doping ions for promotion of semi-conductivity of ZnO grains if calcined; b) individually preparing a desired high-impedance sintering material to be fired as grain boundaries to encapsulate ZnO grains; c) mixing the doped ZnO grains of Step a) with the high-impedance sintering material of Step b) in a predetermined ratio to form a mixture and proceeding with an initial sintering to have the mixture sintered and ground as composite ZnO ceramic powders, and d) processing the sintered mixture of Step c) to make multilayer chip ZnO varistors containing pure silver (Ag) internal electrodes but sintered at ultralow firing temperature of 850-900° C.

Abstract translation: 低成本焙烧工艺可以节约成本，生产出一种含有形成内部电极的纯银（Ag）的多层芯片ZnO压敏电阻，并在850-900℃的超低烧结温度下煅烧，该方法包括：a）单独制备 预先掺杂掺杂离子的ZnO晶粒，如果煅烧，则促进ZnO晶粒的半导电性; b）单独制备待烧结的期望的高阻抗烧结材料作为晶界以包封ZnO颗粒; c）将步骤a）的掺杂ZnO晶粒与步骤b）的高阻抗烧结材料以预定比例混合，形成混合物，并进行初始烧结，将混合物烧结并研磨为复合ZnO陶瓷粉末; d）加工步骤c）的烧结混合物以制备含有纯银（Ag）内部电极但在850-900℃的超低烧结温度下烧结的多层片状ZnO压敏电阻

公开(公告)号：US20130011963A1

公开(公告)日：2013-01-10

申请号：US13614298

申请日：2012-09-13

Applicant: Ching-Hohn LIEN ,  Jie-An ZHU ,  Zhi-Xian XU ,  Hong-Zong XU ,  Ting-Yi FANG ,  Xing-Xiang HUANG

Inventor： Ching-Hohn LIEN ,  Jie-An ZHU ,  Zhi-Xian XU ,  Hong-Zong XU ,  Ting-Yi FANG ,  Xing-Xiang HUANG

IPC: H01L21/02

CPC classification number: C04B35/6261 ,  C01G9/02 ,  C01P2002/50 ,  C01P2002/52 ,  C01P2002/72 ,  C04B35/453 ,  C04B35/62645 ,  C04B35/64 ,  C04B2235/3203 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3239 ,  C04B2235/3241 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3258 ,  C04B2235/3267 ,  C04B2235/3272 ,  C04B2235/3274 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3291 ,  C04B2235/3293 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/36 ,  C04B2235/42 ,  C04B2235/5454 ,  H01C7/112

Abstract: A process for producing zinc oxide varistors possessed a property of breakdown voltage (V1mA) ranging from 230 to 1,730 V/mm is to perform the doping of zinc oxide and the sintering of zinc oxide grains with a high-impedance sintered powder through two independent procedures, so that the doped zinc oxide and the high-impedance sintered powder are well mixed in a predetermined ratio and then used to make the zinc oxide varistors through conventional technology by low-temperature sintering (lower than 900° C.); the resultant zinc oxide varistors may use pure silver as inner electrode and particularly possess breakdown voltage ranging from 230 to 1,730 V/mm.

Abstract translation: 具有230〜1730V / mm的击穿电压（V1mA）的氧化锌变阻器的制造方法是通过两个独立的程序进行氧化锌的掺杂和氧化锌粒子与高阻抗烧结粉末的烧结 ，使得掺杂的氧化锌和高阻抗烧结粉末以预定比例充分混合，然后通过低温烧结（低于900℃）的常规技术制造氧化锌变阻器; 所得到的氧化锌变阻器可以使用纯银作为内部电极，特别是具有230至1730V / mm的击穿电压。