发明申请
- 专利标题: Single Gate Inverter Nanowire Mesh
- 专利标题(中): 单门逆变器纳米线网
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申请号: US13316515申请日: 2011-12-11
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公开(公告)号: US20120138888A1公开(公告)日: 2012-06-07
- 发明人: Josephine Chang , Paul Chang , Michael A. Guillorn , Jeffrey Sleight
- 申请人: Josephine Chang , Paul Chang , Michael A. Guillorn , Jeffrey Sleight
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L27/088
- IPC分类号: H01L27/088 ; H01L29/775 ; B82Y99/00
摘要:
A FET inverter is provided that includes a plurality of device layers oriented vertically in a stack, each device layer having a source region, a drain region and a plurality of nanowire channels, wherein the source and drain regions of one or more of the device layers are doped with an n-type dopant and the source and drain regions of one or more other of the device layers are doped with a p-type dopant; a gate common to each of the device layers surrounding the nanowire channels; a first contact to the source regions of the one or more device layers doped with an n-type dopant; a second contact to the source regions of the one or more device layers doped with a p-type dopant; and a third contact common to the drain regions of each of the device layers. Techniques for fabricating a FET inverter are also provided.
公开/授权文献
- US08466451B2 Single gate inverter nanowire mesh 公开/授权日:2013-06-18