Invention Application
- Patent Title: STORAGE NODES, MAGNETIC MEMORY DEVICES, AND METHODS OF MANUFACTURING THE SAME
- Patent Title (中): 存储编号，磁记录装置及其制造方法
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Application No.: US13313361Application Date: 2011-12-07
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Publication No.: US20120139069A1Publication Date: 2012-06-07
- Inventor: Kwang-seok Kim , U-In Chung , Jai-kwang Shin , Kee-won Kim , Sung-chul Lee , Ung-hwan Pi
- Applicant: Kwang-seok Kim , U-In Chung , Jai-kwang Shin , Kee-won Kim , Sung-chul Lee , Ung-hwan Pi
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2010-0124440 20101207; KR10-2011-0107058 20111019
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L21/04
Abstract:
A storage node of a magnetic memory device includes: a lower magnetic layer, a tunnel barrier layer formed on the lower magnetic layer, and a free magnetic layer formed on the tunnel barrier. The free magnetic layer has a magnetization direction that is switchable in response to a spin current. The free magnetic layer has a cap structure surrounding at least one material layer on which the free magnetic layer is formed.
Public/Granted literature
- US08803266B2 Storage nodes, magnetic memory devices, and methods of manufacturing the same Public/Granted day:2014-08-12
Information query
IPC分类:
