-
1.发明授权公开(公告)号：US08803266B2
公开(公告)日：2014-08-12
申请号：US13313361
申请日：2011-12-07
申请人： Kwang-seok Kim , U-In Chung , Jai-kwang Shin , Kee-won Kim , Sung-chul Lee , Ung-hwan Pi
发明人： Kwang-seok Kim , U-In Chung , Jai-kwang Shin , Kee-won Kim , Sung-chul Lee , Ung-hwan Pi
IPC分类号： H01L29/72
CPC分类号： H01L27/228 , G11C11/161 , H01L29/82 , H01L43/08 , H01L43/12
摘要： A storage node of a magnetic memory device includes: a lower magnetic layer, a tunnel barrier layer formed on the lower magnetic layer, and a free magnetic layer formed on the tunnel barrier. The free magnetic layer has a magnetization direction that is switchable in response to a spin current. The free magnetic layer has a cap structure surrounding at least one material layer on which the free magnetic layer is formed.
摘要翻译： 磁存储器件的存储节点包括：下磁层，形成在下磁层上的隧道势垒层和形成在隧道势垒上的自由磁层。 自由磁性层具有响应于自旋电流而可切换的磁化方向。 自由磁性层具有围绕形成有自由磁性层的至少一个材料层的盖结构。
-
2.发明申请公开(公告)号：US20120139069A1
公开(公告)日：2012-06-07
申请号：US13313361
申请日：2011-12-07
申请人： Kwang-seok Kim , U-In Chung , Jai-kwang Shin , Kee-won Kim , Sung-chul Lee , Ung-hwan Pi
发明人： Kwang-seok Kim , U-In Chung , Jai-kwang Shin , Kee-won Kim , Sung-chul Lee , Ung-hwan Pi
CPC分类号： H01L27/228 , G11C11/161 , H01L29/82 , H01L43/08 , H01L43/12
摘要： A storage node of a magnetic memory device includes: a lower magnetic layer, a tunnel barrier layer formed on the lower magnetic layer, and a free magnetic layer formed on the tunnel barrier. The free magnetic layer has a magnetization direction that is switchable in response to a spin current. The free magnetic layer has a cap structure surrounding at least one material layer on which the free magnetic layer is formed.
摘要翻译： 磁存储器件的存储节点包括：下磁层，形成在下磁层上的隧道势垒层和形成在隧道势垒上的自由磁层。 自由磁性层具有响应于自旋电流而可切换的磁化方向。 自由磁性层具有围绕形成有自由磁性层的至少一个材料层的盖结构。
-
公开(公告)号：US10128433B2
公开(公告)日：2018-11-13
申请号：US15332460
申请日：2016-10-24
申请人： Ung-hwan Pi , Kwang-seok Kim , Kee-won Kim , Sung-chul Lee , Young-man Jang
发明人： Ung-hwan Pi , Kwang-seok Kim , Kee-won Kim , Sung-chul Lee , Young-man Jang
摘要： Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.
-
4.发明授权Memory device using spin hall effect and methods of manufacturing and operating the memory device 有权使用旋转霍尔效应的存储器件以及制造和操作存储器件的方法公开(公告)号：US09530478B2
公开(公告)日：2016-12-27
申请号：US14162144
申请日：2014-01-23
申请人： Ung-hwan Pi , Kwang-seok Kim , Kee-won Kim , Sung-chul Lee , Young-man Jang
发明人： Ung-hwan Pi , Kwang-seok Kim , Kee-won Kim , Sung-chul Lee , Young-man Jang
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/18 , H01L27/222 , H01L43/08
摘要： A memory device using a spin hall effect, and methods of manufacturing and operating the memory device, include applying a first operational current to a bit line of the memory device such that a spin current is applied to a magnetic tunnel junction (MTJ) cell coupled to the bit line due to a material in the bit line, wherein the bit line is electrically connected to a word line via the MTJ cell, and the word line intersects the bit line.
摘要翻译： 使用旋转门厅效应的存储器件以及制造和操作存储器件的方法包括将第一工作电流施加到存储器件的位线，使得自旋电流被施加到耦合到磁性隧道结（MTJ）的单元 由于位线中的材料而导致位线，其中位线经由MTJ单元电连接到字线，并且字线与位线相交。
-
公开(公告)号：US08847692B2
公开(公告)日：2014-09-30
申请号：US13174932
申请日：2011-07-01
申请人： Ung-hwan Pi , Sun-ae Seo , Kee-won Kim , In-jun Hwang , Kwang-seok Kim , Sung-chul Lee
发明人： Ung-hwan Pi , Sun-ae Seo , Kee-won Kim , In-jun Hwang , Kwang-seok Kim , Sung-chul Lee
IPC分类号： H03B15/00
CPC分类号： H03B15/006
摘要： Oscillators and method of operating the same are provided, the oscillators include a magnetic layer, and a magnetization fixing element configured to fix a magnetization direction of the magnetic layer. The oscillators generate a signal by using precession of a magnetic moment of the magnetic layer.
摘要翻译： 提供了振荡器及其操作方法，所述振荡器包括磁性层和构造成固定磁性层的磁化方向的磁化固定元件。 振荡器通过使用磁性层的磁矩的进动来产生信号。
-
公开(公告)号：US08598957B2
公开(公告)日：2013-12-03
申请号：US13208061
申请日：2011-08-11
申请人： Sung-chul Lee , Ung-hwan Pi , Kee-won Kim , Kwang-seok Kim
发明人： Sung-chul Lee , Ung-hwan Pi , Kee-won Kim , Kwang-seok Kim
CPC分类号： H03B15/006 , H01L27/22
摘要： Oscillators and methods of manufacturing and operating an oscillator are provided, the oscillators include a base free layer having a variable magnetization direction, and at least one oscillation unit on the base free layer. The oscillation unit may include a free layer element contacting the base free layer and having a width less than a width of the base free layer, a pinned layer element separated from the free layer element, and a separation layer element between the free layer element and the pinned layer element. A plurality of oscillation units may be arranged on the base free layer.
摘要翻译： 提供振荡器和制造和操作振荡器的方法，所述振荡器包括具有可变磁化方向的基底自由层和在所述基底自由层上的至少一个振荡单元。 振荡单元可以包括与基底自由层接触并具有小于基底自由层的宽度的自由层元件，与自由层元件分离的钉扎层元件，以及在自由层元件和 固定层元素。 多个振荡单元可以布置在基底自由层上。
-
公开(公告)号：US20120038428A1
公开(公告)日：2012-02-16
申请号：US12929388
申请日：2011-01-20
申请人： Sung-chul Lee , Ung-hwan Pi , Kee-won Kim , Kwang-seok Kim , Ho-jung Kim , Hyun-sik Choi
发明人： Sung-chul Lee , Ung-hwan Pi , Kee-won Kim , Kwang-seok Kim , Ho-jung Kim , Hyun-sik Choi
IPC分类号： H03B5/02
CPC分类号： H03B15/006
摘要： Oscillators and a method of operating the same are provided, the oscillators include at least one oscillation device including a first magnetic layer having a magnetization direction that is variable, a second magnetic layer having a pinned magnetization direction, and a non-magnetic layer disposed between the first magnetic layer and the second magnetic layer. The oscillation device is configured to generate a signal having a set frequency. The oscillators further include a driving transistor having a drain connected to the at least one oscillation device, and a gate to which a control signal for controlling driving of the oscillation device is applied.
摘要翻译： 提供了振荡器及其操作方法，所述振荡器包括至少一个振荡器件，该振荡器件包括具有可变磁化方向的第一磁性层，具有钉扎磁化方向的第二磁性层和设置在第二磁性层之间的非磁性层 第一磁性层和第二磁性层。 振荡装置被配置为产生具有设定频率的信号。 振荡器还包括具有连接到至少一个振荡装置的漏极的驱动晶体管，以及施加用于控制振荡装置的驱动的控制信号的栅极。
-
公开(公告)号：US08848432B2
公开(公告)日：2014-09-30
申请号：US13591809
申请日：2012-08-22
申请人： Sung-chul Lee , Kwang-seok Kim , Kee-won Kim , Young-man Jang , Ung-hwan Pi
发明人： Sung-chul Lee , Kwang-seok Kim , Kee-won Kim , Young-man Jang , Ung-hwan Pi
CPC分类号： G11C11/161 , G11C11/15 , H01L43/08 , Y10T428/1121
摘要： Magnetoresistive elements, and memory devices including the same, include a free layer having a changeable magnetization direction, a pinned layer facing the free layer and having a fixed magnetization direction, and an auxiliary element on a surface of the pinned layer. The auxiliary element has a width smaller than a width of the pinned layer, and a magnetization direction fixed to a direction the same as a direction of the fixed magnetization direction of the pinned layer.
摘要翻译： 磁阻元件和包括它们的存储器件包括具有可变磁化方向的自由层，面向自由层的固定层并且具有固定的磁化方向，以及在被钉扎层的表面上的辅助元件。 辅助元件的宽度小于钉扎层的宽度，并且固定在与被钉扎层的固定磁化方向的方向相同的方向上的磁化方向。
-
公开(公告)号：US08421545B2
公开(公告)日：2013-04-16
申请号：US13099684
申请日：2011-05-03
申请人： Kwang-seok Kim , Sung-chul Lee , Kee-won Kim , Sun-ae Seo , Ung-hwan Pi
发明人： Kwang-seok Kim , Sung-chul Lee , Kee-won Kim , Sun-ae Seo , Ung-hwan Pi
CPC分类号： H03B15/006
摘要： Oscillators and methods of operating the same, the oscillators include a pinned layer having a fixed magnetization direction, a first free layer over the pinned layer, and a second free layer over the first free layer. The oscillators are configured to generate a signal using precession of a magnetic moment of at least one of the first and second free layers.
摘要翻译： 振荡器及其操作方法，振荡器包括具有固定磁化方向的钉扎层，被钉扎层上的第一自由层，以及在第一自由层上的第二自由层。 振荡器被配置为使用第一和第二自由层中的至少一个的磁矩的进动来产生信号。
-
10.发明授权公开(公告)号：US09570675B2
公开(公告)日：2017-02-14
申请号：US14167553
申请日：2014-01-29
申请人： Kee-won Kim , Kwang-seok Kim , Sung-chul Lee , Young-man Jang , Ung-hwan Pi
发明人： Kee-won Kim , Kwang-seok Kim , Sung-chul Lee , Young-man Jang , Ung-hwan Pi
CPC分类号： H01L43/12 , G11C11/161 , H01L27/228 , H01L43/08
摘要： Magnetoresistive structures, magnetic random-access memory devices including the same, and methods of manufacturing the magnetoresistive structure, include a first magnetic layer having a magnetization direction that is fixed, a second magnetic layer corresponding to the first magnetic layer, wherein a magnetization direction of the second magnetic layer is changeable, and a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer.
摘要翻译： 磁阻结构，包括该磁阻结构的磁性随机存取存储器以及制造磁阻结构的方法包括具有固定的磁化方向的第一磁性层，与第一磁性层对应的第二磁性层， 第二磁性层是可变的，以及在第一磁性层和第二磁性层之间的磁阻（MR）增强层和中间层。
-
-
-
-
-
-
-
-
-
搜索结果
49 条记录 (耗时 0.036 秒)
