Invention Application
- Patent Title: FAST MEASUREMENT OF X-RAY DIFFRACTION FROM TILTED LAYERS
- Patent Title (中): 从倾斜层快速测量X射线衍射
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Application No.: US12958420Application Date: 2010-12-02
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Publication No.: US20120140889A1Publication Date: 2012-06-07
- Inventor: John Wall , David Jacques , Boris Yokhin , Alexander Krokhmal , Paul Ryan , Richard Bytheway , David Berman , Matthew Wormington
- Applicant: John Wall , David Jacques , Boris Yokhin , Alexander Krokhmal , Paul Ryan , Richard Bytheway , David Berman , Matthew Wormington
- Applicant Address: IL Migdal HaEmek
- Assignee: JORDAN VALLEY SEMICONDUCTORS LTD.
- Current Assignee: JORDAN VALLEY SEMICONDUCTORS LTD.
- Current Assignee Address: IL Migdal HaEmek
- Main IPC: G01N23/207
- IPC: G01N23/207

Abstract:
A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having multiple single-crystal layers, including at least a first layer and a second layer that is formed over and tilted relative to the first layer. The X-rays that are diffracted from each of the first and second layers are sensed simultaneously while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including at least a first diffraction peak due to the first layer and a second diffraction peak due to the second layer. The diffraction spectrum is analyzed so as to identify a characteristic of at least the second layer.
Public/Granted literature
- US08437450B2 Fast measurement of X-ray diffraction from tilted layers Public/Granted day:2013-05-07
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