发明申请
US20120141940A1 CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTORESIST COMPOSITION FOR THICK FILM, AND METHOD FOR PRODUCING THICK FILM RESIST PATTERN
审中-公开
用于厚膜的化学放大的正极型光电组合物和用于生产厚膜电阻图案的方法
- 专利标题： CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTORESIST COMPOSITION FOR THICK FILM, AND METHOD FOR PRODUCING THICK FILM RESIST PATTERN
- 专利标题（中）： 用于厚膜的化学放大的正极型光电组合物和用于生产厚膜电阻图案的方法
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申请号： US13307911申请日： 2011-11-30
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公开(公告)号： US20120141940A1公开(公告)日： 2012-06-07
- 发明人: Takahiro Shimizu , Yasushi Washio , Tomoyuki Ando , Jun Koshiyama
- 申请人： Takahiro Shimizu , Yasushi Washio , Tomoyuki Ando , Jun Koshiyama
- 申请人地址： JP Kawasaki-shi
- 专利权人： TOKYO OHKA KOGYO CO., LTD.
- 当前专利权人： TOKYO OHKA KOGYO CO., LTD.
- 当前专利权人地址： JP Kawasaki-shi
- 优先权： JP2010-273026 20101207; JP2011-245494 20111109
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F7/027
摘要：
A chemically amplified positive-type photoresist composition for a thick film capable of forming a thick film resist pattern having superior resolving ability and controllability of dimensions, and being favorable in rectangularity, as well as a method for producing a thick film resist pattern using such a composition. The photoresist composition comprises an acid generator including a cationic moiety and an anionic moiety, and a resin whose alkali solubility increases by the action of an acid.
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