- 专利标题: LOWER LINER WITH INTEGRATED FLOW EQUALIZER AND IMPROVED CONDUCTANCE
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申请号: US13401572申请日: 2012-02-21
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公开(公告)号: US20120145326A1公开(公告)日: 2012-06-14
- 发明人: James D. CARDUCCI , Andrew NGUYEN , Ajit BALAKRISHNA , Michael C. KUTNEY
- 申请人: James D. CARDUCCI , Andrew NGUYEN , Ajit BALAKRISHNA , Michael C. KUTNEY
- 主分类号: H05H1/24
- IPC分类号: H05H1/24 ; B44C1/22
摘要:
A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.
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