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    APPARATUS AND METHOD FOR FRONT SIDE PROTECTION DURING BACKSIDE CLEANING
    3.
    发明申请
    APPARATUS AND METHOD FOR FRONT SIDE PROTECTION DURING BACKSIDE CLEANING 审中-公开
    背景清洁期间前侧保护的装置和方法

    公开(公告)号：US20110120505A1

    公开(公告)日：2011-05-26

    申请号：US13017569

    申请日：2011-01-31

    申请人： IMAD YOUSIF ,  Ying Rui ,  Nancy Fung ,  Martin Jeffrey Salinas ,  Ajit Balakrishna ,  Anchel Sheyner ,  Shahid Rauf ,  Walter R. Merry

    发明人： IMAD YOUSIF ,  Ying Rui ,  Nancy Fung ,  Martin Jeffrey Salinas ,  Ajit Balakrishna ,  Anchel Sheyner ,  Shahid Rauf ,  Walter R. Merry

    IPC分类号： B08B3/00 ,  B08B13/00 ,  H05H1/24 ,  B05B1/00

    CPC分类号： H01L21/6708 ,  B05B1/18

    摘要： Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region.

    摘要翻译： 本发明的实施例提供了在处理基板的侧面和背面时用于正面保护的装置和方法。 本发明的一个实施例提供了一种喷淋头，其配置为在背面蚀刻处理期间向基板的前侧提供净化气体。 喷头包括构造成设置在基板的前侧上的主体。 主体具有配置为面向基板的前侧的工艺表面。 处理表面具有外圆周区域，中心区域，外部中心区域和中心区域之间的中间区域。 第一多个孔分布在外部圆形区域中，并被配置成将清洗气体引导到衬底前侧的边缘区域。 没有气体输送孔分布在中间区域的大部分内。

    ELECTRICAL CONTROL OF PLASMA UNIFORMITY USING EXTERNAL CIRCUIT
    4.
    发明申请
    ELECTRICAL CONTROL OF PLASMA UNIFORMITY USING EXTERNAL CIRCUIT 审中-公开
    使用外部电路的等离子体均匀性的电气控制

    公开(公告)号：US20090230089A1

    公开(公告)日：2009-09-17

    申请号：US12047492

    申请日：2008-03-13

    申请人： KALLOL BERA ,  SHAHID RAUF ,  AJIT BALAKRISHNA ,  KENNETH S. COLLINS ,  KARTIK RAMASWAMY ,  HIROJI HANAWA

    发明人： KALLOL BERA ,  SHAHID RAUF ,  AJIT BALAKRISHNA ,  KENNETH S. COLLINS ,  KARTIK RAMASWAMY ,  HIROJI HANAWA

    IPC分类号： B01J19/08 ,  C23F1/00

    CPC分类号： H01J37/32174 ,  H01J37/32009 ,  H01J37/32045 ,  H01J37/32091

    摘要： A method and apparatus for controlling plasma uniformity is disclosed. When etching a substrate, a non-uniform plasma may lead to uneven etching of the substrate. Impedance circuits may alleviate the uneven plasma to permit more uniform etching. The impedance circuits may be disposed between the chamber wall and ground, the showerhead and ground, and the cathode can and ground. The impedance circuits may comprise one or more of an inductor and a capacitor. The inductance of the inductor and the capacitance of the capacitor may be predetermined to ensure the plasma is uniform. Additionally, the inductance and capacitance may be adjusted during processing or between processing steps to suit the needs of the particular process.

    摘要翻译： 公开了一种用于控制等离子体均匀性的方法和装置。 当蚀刻基板时，不均匀的等离子体可能导致基板的不均匀蚀刻。 阻抗电路可以减轻不均匀的等离子体以允许更均匀的蚀刻。 阻抗电路可以设置在室壁和地面之间，淋浴头和地面以及阴极罐和地面之间。 阻抗电路可以包括电感器和电容器中的一个或多个。 电感器的电感和电容器的电容可以被预先确定，以确保等离子体是均匀的。 此外，可以在处理期间或在处理步骤之间调整电感和电容以适应特定工艺的需要。

    GAS FLOW EQUALIZER PLATE SUITABLE FOR USE IN A SUBSTRATE PROCESS CHAMBER
    5.
    发明申请
    GAS FLOW EQUALIZER PLATE SUITABLE FOR USE IN A SUBSTRATE PROCESS CHAMBER 失效
    气体流平衡板适用于基板工艺室

    公开(公告)号：US20090218043A1

    公开(公告)日：2009-09-03

    申请号：US12038887

    申请日：2008-02-28

    申请人： Ajit Balakrishna ,  Shahid Rauf ,  Andrew Nguyen ,  Michael D. Willwerth ,  Valentin N. Todorow

    发明人： Ajit Balakrishna ,  Shahid Rauf ,  Andrew Nguyen ,  Michael D. Willwerth ,  Valentin N. Todorow

    IPC分类号： H01L21/306

    CPC分类号： H01J37/32449 ,  H01J37/3244

    摘要： A flow equalizer plate is provided for use in a substrate process chamber. The flow equalizer plate has an annular shape with a flow obstructing inner region, and a perforated outer region that permits the passage of a processing gas, but retains specific elements in the processing gas, such as active radicals or ions. The inner and outer regions have varying radial widths so as to balance a flow of processing gas over a surface of a substrate. In certain embodiments, the flow equalizer plate may be utilized to correct chamber flow asymmetries due to a lateral offset of an exhaust port relative to a center line of a substrate support between the process volume and the exhaust port.

    摘要翻译： 提供流量均衡器板用于衬底处理室。 流量均衡器板具有流动阻挡内部区域的环形形状，以及允许处理气体通过但在处理气体中保留特定元素的穿孔外部区域，例如活性自由基或离子。 内部和外部区域具有变化的径向宽度，以平衡处理气体在衬底表面上的流动。 在某些实施例中，流量均衡器板可用于校正由于排气口相对于处理容积和排气口之间的衬底支撑件的中心线的横向偏移造成的室流动不对称性。

    Method of thermal processing structures formed on a substrate
    6.
    发明授权
    Method of thermal processing structures formed on a substrate 有权
    在基板上形成的热处理结构的方法

    公开(公告)号：US07569463B2

    公开(公告)日：2009-08-04

    申请号：US11459847

    申请日：2006-07-25

    申请人： Ajit Balakrishna ,  Paul Carey ,  Dean Jennings ,  Abhilash Mayur ,  Stephen Moffatt ,  William Schaffer ,  Mark Yam

    发明人： Ajit Balakrishna ,  Paul Carey ,  Dean Jennings ,  Abhilash Mayur ,  Stephen Moffatt ,  William Schaffer ,  Mark Yam

    IPC分类号： H01L21/04

    CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/6659 ,  H01L29/66659

    摘要： The present invention generally describes one or more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

    摘要翻译： 本发明总体上描述了一种或多种用于在衬底的期望区域上进行退火处理的设备和各种方法。 在一个实施例中，一定量的能量被传送到衬底的表面以优先地熔化衬底的某些所需区域以去除由先前的处理步骤（例如，从注入工艺引起的晶体损伤）所产生的不必要的损坏，更均匀地分布各种掺杂剂 基底的区域和/或激活基底的各个区域。 由于掺杂剂原子在衬底的熔融区域中的扩散速率和溶解度增加，优选熔融过程将允许掺杂剂在熔融区域中更均匀地分布。 熔化区域的产生因此允许：1）掺杂剂原子更均匀地重新分布，2）在先前的待处理步骤中产生的缺陷，以及3）具有要突变的掺杂剂浓度的区域。

    Tunable gas flow equalizer
    9.
    发明授权
    Tunable gas flow equalizer 失效
    可调气流均衡器

    公开(公告)号：US08398814B2

    公开(公告)日：2013-03-19

    申请号：US12499742

    申请日：2009-07-08

    申请人： Ajit Balakrishna ,  Jason Andrew Kenney ,  Andrew Nguyen ,  Kenneth Collins

    发明人： Ajit Balakrishna ,  Jason Andrew Kenney ,  Andrew Nguyen ,  Kenneth Collins

    IPC分类号： H01L21/3065

    CPC分类号： C23C16/4412 ,  C23C16/45591

    摘要： A tunable gas flow equalizer is described. In an embodiment, the tunable flow equalizer includes a gas flow equalizer plate having primary opening and a secondary opening. The primary opening may surround a substrate support, and the secondary opening may be configured with a tuner. In an embodiment, the substrate support may be vertically adjustable with respect to the gas flow equalizer plate. The flow uniformity may be fine tuned by adjusting a tuner configured with a secondary opening in the gas flow equalizer plate and/or by adjusting the height of a vertically positionable substrate support plate having an inwardly tapered skirt 528 with respect to the gas flow equalizer plate 520.

    摘要翻译： 描述了可调气流均衡器。 在一个实施例中，可调流量均衡器包括具有主开口和次开口的气流均衡器板。 主开口可以围绕衬底支撑件，并且次级开口可以配置有调谐器。 在一个实施例中，衬底支撑件可以相对于气流均衡器板垂直调节。 可以通过调节在气流均衡器板中配置有次级开口的调谐器和/或通过调节具有相对于气流均衡器板的向内锥形裙部528的垂直定位的衬底支撑板的高度来微调流动均匀性 520。