发明申请
US20120146167A1 MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME
审中-公开
具有热稳定性的磁铁隧道结（MEM）的存储系统及其制造方法
- 专利标题： MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME
- 专利标题（中）： 具有热稳定性的磁铁隧道结（MEM）的存储系统及其制造方法
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申请号： US13277187申请日： 2011-10-19
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公开(公告)号： US20120146167A1公开(公告)日： 2012-06-14
- 发明人: Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
- 申请人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
- 申请人地址： US CA Fremont
- 专利权人： Avalanche Technology
- 当前专利权人： Avalanche Technology
- 当前专利权人地址： US CA Fremont
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; B05D5/12
摘要：
A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.
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