Invention Application
- Patent Title: MILLIMETER-WAVE WIDEBAND FREQUENCY DOUBLER
- Patent Title (中): MILLIMETER-WAVE WIDEBAND频率双打
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Application No.: US12967160Application Date: 2010-12-14
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Publication No.: US20120146747A1Publication Date: 2012-06-14
- Inventor: Po-Yi WU , Hsieh-Hung HSIEH , Ho-Hsiang CHEN , Tzu-Jin YEH , Chewn-Pu JOU , Fu-Lung HSUEH
- Applicant: Po-Yi WU , Hsieh-Hung HSIEH , Ho-Hsiang CHEN , Tzu-Jin YEH , Chewn-Pu JOU , Fu-Lung HSUEH
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: H03B19/00
- IPC: H03B19/00

Abstract:
A millimeter-wave wideband frequency doubler stage for use in a distributed frequency doubler includes: a differential input pair of transistors, each transistor having respective gate, drain and source terminals, wherein the source terminals are coupled together to a first power supply node and the drain terminals are coupled together at a first node to a second power supply node; first and second pairs of bandpass gate lines coupled to the gate terminals of the transistors; and a pair of bandpass drain lines coupled to the drain terminals of the transistors.
Public/Granted literature
- US08451033B2 Millimeter-wave wideband frequency doubler Public/Granted day:2013-05-28
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