发明申请
- 专利标题： PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM
- 专利标题（中）： 图案形成方法，化学放大电阻组合物和电阻膜
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申请号： US13390847申请日： 2010-10-05
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公开(公告)号： US20120148957A1公开(公告)日： 2012-06-14
- 发明人: Yuichiro Enomoto , Sou Kamimura , Shinji Tarutani , Keita Kato , Kaoru Iwato
- 申请人： Yuichiro Enomoto , Sou Kamimura , Shinji Tarutani , Keita Kato , Kaoru Iwato
- 申请人地址： JP Tokyo
- 专利权人： FUJIFILM CORPORATION
- 当前专利权人： FUJIFILM CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-232706 20091006; JP2009-285584 20091216
- 国际申请： PCT/JP2010/067808 WO 20101005
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F7/075 ; G03F7/004
摘要：
A pattern forming method includes: (i) forming a film from a chemical amplification resist composition; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains: (A) a resin substantially insoluble in alkali; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a crosslinking agent; and (D) a solvent, a negative chemical amplification resist composition used in the method, and a resist film formed from the negative chemical amplification resist composition.
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