发明申请
- 专利标题： NITRIDE ETCH FOR IMPROVED SPACER UNIFORMITY
- 专利标题（中）： 用于改进间隔均匀的氮化层
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申请号： US12966432申请日： 2010-12-13
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公开(公告)号： US20120149200A1公开(公告)日： 2012-06-14
- 发明人: James A. Culp , John J. Ellis-Monaghan , Jeffrey P. Gambino , Kirk D. Peterson , Jed H. Rankin , Christa R. Willets
- 申请人： James A. Culp , John J. Ellis-Monaghan , Jeffrey P. Gambino , Kirk D. Peterson , Jed H. Rankin , Christa R. Willets
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/311
- IPC分类号： H01L21/311
摘要：
A method of forming dielectric spacers including providing a substrate comprising a first region having a first plurality of gate structures and a second region having a second plurality of gate structures and at least one oxide containing material or a carbon containing material. Forming a nitride containing layer over the first region having a thickness that is less than the thickness of the nitride containing layer that is present in the second region. Forming dielectric spacers from the nitride containing layer on the first plurality the second plurality of gate structures. The at least one oxide containing material or carbon containing material accelerates etching in the second region so that the thickness of the dielectric spacers in the first region is substantially equal to the thickness of the dielectric spacers in the second region of the substrate.
公开/授权文献
- US08470713B2 Nitride etch for improved spacer uniformity 公开/授权日：2013-06-25
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