Invention Application
- Patent Title: INERTIAL SENSOR
- Patent Title (中): 惯性传感器
-
Application No.: US13165436Application Date: 2011-06-21
-
Publication No.: US20120152020A1Publication Date: 2012-06-21
- Inventor: Jong Woon Kim , Liwei Lin , Minyao Mao , Heung Woo Park
- Applicant: Jong Woon Kim , Liwei Lin , Minyao Mao , Heung Woo Park
- Applicant Address: KR Gyunggi-do
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Gyunggi-do
- Priority: KR1020100128538 20101215
- Main IPC: G01P15/125
- IPC: G01P15/125 ; G01P15/09 ; G01P15/12 ; G01P15/00

Abstract:
Disclosed herein is an inertial sensor. There is provided an inertial sensor 100, including: a plate-like substrate layer 110, a mass body 130, a post 140, a support part 150 extending in the central direction of the mass body 130 from the post 140, and a detection unit 170 detecting the displacement of the displacement part 113. The inertial sensor adopts the support part 150 limiting the downward displacement of the mass body 130 to prevent the support portion of the mass body 130 from being damaged.
Public/Granted literature
- US08739628B2 Inertial sensor Public/Granted day:2014-06-03
Information query
IPC分类: