发明申请
- 专利标题: METHOD OF MANUFACTURING LIGHT EMITTING DIODE
- 专利标题(中): 制造发光二极管的方法
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申请号: US13208639申请日: 2011-08-12
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公开(公告)号: US20120160157A1公开(公告)日: 2012-06-28
- 发明人: Sang Heon HAN , Do Young Rhee , Jin Young Lim , Ki Sung Kim , Young Sun Kim
- 申请人: Sang Heon HAN , Do Young Rhee , Jin Young Lim , Ki Sung Kim , Young Sun Kim
- 优先权: KR10-2010-0132393 20101222
- 主分类号: C30B25/02
- IPC分类号: C30B25/02 ; C30B25/08
摘要:
There is provided a method of manufacturing a light emitting diode, the method including: growing a first conductivity type nitride semiconductor layer and an active layer on a substrate in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the active layer grown thereon to a second reaction chamber; and growing a second conductivity type nitride semiconductor layer on the active layer in the second reaction chamber, wherein an atmosphere including a nitride source gas and a dopant source gas supplying a dopant to be included in the second conductivity type nitride semiconductor layer is created in an interior of the second reaction chamber prior to the transferring of the substrate to the second reaction chamber. This method improves a system's operational capability and productivity. In addition, the crystallinity and doping uniformity of semiconductor layers obtained by this method may be improved.