公开(公告)号：US20120160157A1

公开(公告)日：2012-06-28

申请号：US13208639

申请日：2011-08-12

申请人： Sang Heon HAN ,  Do Young Rhee ,  Jin Young Lim ,  Ki Sung Kim ,  Young Sun Kim

发明人： Sang Heon HAN ,  Do Young Rhee ,  Jin Young Lim ,  Ki Sung Kim ,  Young Sun Kim

IPC分类号： C30B25/02 ,  C30B25/08

CPC分类号： H01L33/007 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/325

摘要： There is provided a method of manufacturing a light emitting diode, the method including: growing a first conductivity type nitride semiconductor layer and an active layer on a substrate in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the active layer grown thereon to a second reaction chamber; and growing a second conductivity type nitride semiconductor layer on the active layer in the second reaction chamber, wherein an atmosphere including a nitride source gas and a dopant source gas supplying a dopant to be included in the second conductivity type nitride semiconductor layer is created in an interior of the second reaction chamber prior to the transferring of the substrate to the second reaction chamber. This method improves a system's operational capability and productivity. In addition, the crystallinity and doping uniformity of semiconductor layers obtained by this method may be improved.

摘要翻译： 提供一种制造发光二极管的方法，该方法包括：在第一反应室中在衬底上生长第一导电型氮化物半导体层和有源层; 将具有第一导电型氮化物半导体层的基板和其上生长的活性层转移到第二反应室; 以及在所述第二反应室中的所述有源层上生长第二导电型氮化物半导体层，其中在所述第二导电型氮化物半导体层中产生包含氮化物源气体和供给掺杂剂的掺杂剂源气体的气氛 在将基板转移到第二反应室之前，第二反应室的内部。 该方法提高了系统的运行能力和生产率。 此外，可以提高通过该方法获得的半导体层的结晶度和掺杂均匀性。

公开(公告)号：US08779412B2

公开(公告)日：2014-07-15

申请号：US13553344

申请日：2012-07-19

申请人： Sang Heon Han ,  Do Young Rhee ,  Jong Hyun Lee ,  Jin Young Lim ,  Young Sun Kim

发明人： Sang Heon Han ,  Do Young Rhee ,  Jong Hyun Lee ,  Jin Young Lim ,  Young Sun Kim

IPC分类号： H01L33/00 ,  H01L29/06

CPC分类号： H01L33/06 ,  H01L33/32

摘要： There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.

摘要翻译： 提供一种半导体发光器件，包括：第一和第二导电类型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有多个量子势垒层和多个量子阱层交替设置的结构的有源层，其中多个量子阱层中的至少一个包括 带隙能量通过第一斜率​​减小的第一区域和通过不同于第一斜率的第二斜率使带隙能量减小的第二区域。 通过调整量子阱层的带隙的形状，极化的影响被最小化，可以提高结晶度和内部量子效率。

公开(公告)号：US20130020553A1

公开(公告)日：2013-01-24

申请号：US13553344

申请日：2012-07-19

申请人： Sang Heon Han ,  Do Young Rhee ,  Jong Hyun Lee ,  Jin Young Lim ,  Young Sun Kim

发明人： Sang Heon Han ,  Do Young Rhee ,  Jong Hyun Lee ,  Jin Young Lim ,  Young Sun Kim

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L33/32

摘要： There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.

摘要翻译： 提供一种半导体发光器件，包括：第一和第二导电类型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有多个量子势垒层和多个量子阱层交替设置的结构的有源层，其中多个量子阱层中的至少一个包括 带隙能量通过第一斜率​​减小的第一区域和通过不同于第一斜率的第二斜率使带隙能量减小的第二区域。 通过调整量子阱层的带隙的形状，极化的影响被最小化，可以提高结晶度和内部量子效率。

公开(公告)号：US20140224176A1

公开(公告)日：2014-08-14

申请号：US14124190

申请日：2011-08-09

申请人： Do Young Rhee ,  Young Sun Kim ,  Sung Tae Kim ,  Sang Heon Han ,  Ki Sung Kim

发明人： Do Young Rhee ,  Young Sun Kim ,  Sung Tae Kim ,  Sang Heon Han ,  Ki Sung Kim

IPC分类号： C30B25/08 ,  C30B25/12

CPC分类号： C30B25/08 ,  C23C16/44 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45508 ,  C23C16/4584 ,  C30B25/12 ,  C30B25/14

摘要： A metal-organic chemical vapor deposition (MOCVD) apparatus includes: a reaction chamber including a chamber main body forming an interior space having a certain volume and a chamber cover hermetically sealing the chamber main body to maintain air-tightness; a susceptor rotatably provided within the chamber main body and having one or more accommodation portions formed in an upper surface thereto to accommodate wafers; a cover member detachably provided on an interior surface of the chamber cover, forming a reaction space between the cover member and the susceptor, and formed by coupling a plurality of section members; and a gas supply unit supplying a reactive gas to the reaction space to allow the reactive gas to flow between the susceptor and the cover member.

摘要翻译： 金属有机化学气相沉积（MOCVD）装置包括：反应室，包括形成具有一定体积的内部空间的室主体和密封室主体以保持气密性的室盖; 感受器，其可旋转地设置在所述室主体内并且具有形成在其上表面中的一个或多个容纳部分以容纳晶片; 盖构件，其可拆卸地设置在所述室盖的内表面上，在所述盖构件和所述基座之间形成反作用空间，并且通过联接多个区段构件而形成; 以及气体供应单元，其向所述反应空间供应反应性气体，以允许所述反应性气体在所述基座和所述盖构件之间流动。

公开(公告)号：US08055299B2

公开(公告)日：2011-11-08

申请号：US12267808

申请日：2008-11-10

申请人： Do Young Rhee ,  Jeong Seok Lee ,  Seong Min Seo ,  Tae Mi Kim

发明人： Do Young Rhee ,  Jeong Seok Lee ,  Seong Min Seo ,  Tae Mi Kim

IPC分类号： H04B1/38

CPC分类号： H04M1/7253 ,  H04M1/0285 ,  H04M2250/12

摘要： A mobile input device of a mobile terminal includes: a selection unit for selecting an application program of the mobile terminal; an execution instruction unit for generating an instruction to execute the application program; and a wireless communication unit for transmitting the instruction to execute to the mobile terminal, wherein the mobile input device inputs information to the executed application program.

摘要翻译： 移动终端的移动输入装置包括：选择单元，用于选择移动终端的应用程序; 执行指令单元，用于生成执行应用程序的指令; 以及用于向所述移动终端发送要执行的指令的无线通信单元，其中，所述移动输入设备向所执行的应用程序输入信息。