发明申请
- 专利标题： Transistor Comprising High-K Metal Gate Electrode Structures Including a Polycrystalline Semiconductor Material and Embedded Strain-Inducing Semiconductor Alloys
- 专利标题（中）： 晶体管包括包含多晶半导体材料和嵌入式应变诱导半导体合金的高K金属栅电极结构
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申请号： US13198209申请日： 2011-08-04
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公开(公告)号： US20120161250A1公开(公告)日： 2012-06-28
- 发明人: Stephan-Detlef Kronholz , Peter Javorka , Maciej Wiatr
- 申请人： Stephan-Detlef Kronholz , Peter Javorka , Maciej Wiatr
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 优先权： DE102010064291.6 20101228
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
When forming sophisticated high-k metal gate electrode structures in an early manufacturing stage on the basis of a silicon/germanium semiconductor alloy for adjusting appropriate electronic conditions in the channel region, the efficiency of a strain-inducing embedded semiconductor alloy, such as a silicon/germanium alloy, may be enhanced by initiating a crystal growth in the silicon material of the gate electrode structure after the gate patterning process. In this manner, the negative strain of the threshold voltage adjusting silicon/germanium alloy may be reduced or compensated for.
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