发明申请
US20120164376A1 METHOD OF MODIFYING A SUBSTRATE FOR PASSAGE HOLE FORMATION THEREIN, AND RELATED ARTICLES
审中-公开
修改用于通气孔形成的基板的方法及相关文章
- 专利标题： METHOD OF MODIFYING A SUBSTRATE FOR PASSAGE HOLE FORMATION THEREIN, AND RELATED ARTICLES
- 专利标题（中）： 修改用于通气孔形成的基板的方法及相关文章
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申请号： US12977554申请日： 2010-12-23
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公开(公告)号： US20120164376A1公开(公告)日： 2012-06-28
- 发明人: Ronald Scott Bunker , Bin Wei , Huan Qi
- 申请人： Ronald Scott Bunker , Bin Wei , Huan Qi
- 申请人地址： US NY Schenectady
- 专利权人： GENERAL ELECTRIC COMPANY
- 当前专利权人： GENERAL ELECTRIC COMPANY
- 当前专利权人地址： US NY Schenectady
- 主分类号： B32B3/24
- IPC分类号： B32B3/24 ; B23K26/00 ; C23C14/18
摘要：
A method for the formation of at least one passage hole in a high-temperature substrate is described. For each desired passage hole or group of passage holes, a node is first formed on the exterior surface of the substrate, by a laser consolidation process. The node functions as a pre-selected entry region for each passage hole. The passage hole can then be formed through the node, into the substrate. Related articles, such as turbine engine components, are also described.
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