发明申请
- 专利标题： FABRICATION OF THROUGH-SILICON VIAS ON SILICON WAFERS
- 专利标题（中）： 在硅陶瓷上制造通孔硅
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申请号： US12977060申请日： 2010-12-22
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公开(公告)号： US20120164829A1公开(公告)日： 2012-06-28
- 发明人: Nagarajan Rajagopalan , Ji Ae Park , Ryan Yamase , Shamik Patel , Thomas Nowak , Li-Qun Xia , Bok Hoen Kim , Ran Ding , Jim Baldino , Mehul Naik , Sesh Ramaswami
- 申请人： Nagarajan Rajagopalan , Ji Ae Park , Ryan Yamase , Shamik Patel , Thomas Nowak , Li-Qun Xia , Bok Hoen Kim , Ran Ding , Jim Baldino , Mehul Naik , Sesh Ramaswami
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.
公开/授权文献
- US08329575B2 Fabrication of through-silicon vias on silicon wafers 公开/授权日：2012-12-11
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