发明申请
- 专利标题: METHOD FOR RECONSTRUCTING A SEMICONDUCTOR TEMPLATE
- 专利标题(中): 重构半导体模板的方法
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申请号: US13341976申请日: 2011-12-31
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公开(公告)号: US20120167819A1公开(公告)日: 2012-07-05
- 发明人: Karl-Josef Kramer , Mehrdad M. Moslehi , David Xuan-Qi Wang , Rahim Kavari , Rafael Ricolcol , Jay Ashjaee
- 申请人: Karl-Josef Kramer , Mehrdad M. Moslehi , David Xuan-Qi Wang , Rahim Kavari , Rafael Ricolcol , Jay Ashjaee
- 申请人地址: US CA Milpitas
- 专利权人: SOLEXEL, INC.
- 当前专利权人: SOLEXEL, INC.
- 当前专利权人地址: US CA Milpitas
- 主分类号: C30B25/18
- IPC分类号: C30B25/18
摘要:
The disclosed subject matter pertains to deposition of thin film or thin foil materials in general, but more specifically to deposition of epitaxial monocrystalline or quasi-monocrystalline silicon film (epi film) for use in manufacturing of high efficiency solar cells. In operation, methods are disclosed which extend the reusable life and to reduce the amortized cost of a substrate or template used in the manufacturing process of silicon solar cells. Further, methods are disclosed which provide for the conversion of a low quality starting surface into an improved quality starting surface of a silicon wafer.
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