发明申请
US20120168710A1 Growth and Transfer of Monolithic Horizontal Nanowire Superstructures onto Flexible Substrates 有权
整体水平纳米线超结构在柔性基板上的生长和转移

Growth and Transfer of Monolithic Horizontal Nanowire Superstructures onto Flexible Substrates
摘要:
In a method of making a monolithic elongated nanowire, a mask polymer layer is applied to a selected crystal surface of a seed crystal. A plurality of spaced apart elongated openings is defined through the mask polymer layer, thereby exposing a corresponding plurality of portions of the crystal surface. The openings are disposed so as to be aligned with and parallel to a selected crystal axis of the seed crystal. The portions of the crystal surface are subjected to a chemical nutrient environment that causes crystalline material to grow from the plurality of portions for at least a period of time so that monocrystalline members grow from the elongated openings and until the monocrystalline members laterally expand so that each monocrystalline member grows into and merges with an adjacent one of the monocrystalline members, thereby forming a monolithic elongated nanowire.
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