发明申请
- 专利标题: Growth and Transfer of Monolithic Horizontal Nanowire Superstructures onto Flexible Substrates
- 专利标题(中): 整体水平纳米线超结构在柔性基板上的生长和转移
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申请号: US12980666申请日: 2010-12-29
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公开(公告)号: US20120168710A1公开(公告)日: 2012-07-05
- 发明人: Zhong L. Wang , Sheng Xu
- 申请人: Zhong L. Wang , Sheng Xu
- 申请人地址: US GA Atlanta
- 专利权人: GEORGIA TECH RESEARCH CORPORATION
- 当前专利权人: GEORGIA TECH RESEARCH CORPORATION
- 当前专利权人地址: US GA Atlanta
- 主分类号: H01L29/66
- IPC分类号: H01L29/66 ; B05D5/12 ; C08K3/22 ; C30B19/00 ; C08L33/12 ; B82Y40/00 ; B82Y30/00
摘要:
In a method of making a monolithic elongated nanowire, a mask polymer layer is applied to a selected crystal surface of a seed crystal. A plurality of spaced apart elongated openings is defined through the mask polymer layer, thereby exposing a corresponding plurality of portions of the crystal surface. The openings are disposed so as to be aligned with and parallel to a selected crystal axis of the seed crystal. The portions of the crystal surface are subjected to a chemical nutrient environment that causes crystalline material to grow from the plurality of portions for at least a period of time so that monocrystalline members grow from the elongated openings and until the monocrystalline members laterally expand so that each monocrystalline member grows into and merges with an adjacent one of the monocrystalline members, thereby forming a monolithic elongated nanowire.
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