发明申请
US20120168724A1 TRANSFER-FREE BATCH FABRICATION OF SINGLE LAYER GRAPHENE DEVICES
有权
单层石墨切片装置的无转移批量生产
- 专利标题： TRANSFER-FREE BATCH FABRICATION OF SINGLE LAYER GRAPHENE DEVICES
- 专利标题（中）： 单层石墨切片装置的无转移批量生产
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申请号： US13384663申请日： 2010-07-21
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公开(公告)号： US20120168724A1公开(公告)日： 2012-07-05
- 发明人: Jiwoong Park , Carlos Ruiz-Vargas , Mark Philip Levendorf , Lola Brown
- 申请人： Jiwoong Park , Carlos Ruiz-Vargas , Mark Philip Levendorf , Lola Brown
- 申请人地址： US NY Ithaca
- 专利权人： CORNELL UNIVERSITY
- 当前专利权人： CORNELL UNIVERSITY
- 当前专利权人地址： US NY Ithaca
- 国际申请： PCT/US10/42702 WO 20100721
- 主分类号： H01L29/775
- IPC分类号： H01L29/775 ; H01L21/20
摘要：
A method of manufacturing one or more graphene devices is disclosed. A thin film growth substrate is formed directly on a device substrate. Graphene is formed on the thin film growth substrate. A transistor is also disclosed, having a device substrate and a source supported by the device substrate. The transistor also has a drain separated from the source and supported by the device substrate. The transistor further has a single layer graphene (SLG) channel grown partially on and coupling the source and the drain. The transistor also has a gate aligned with the SLG channel, and a gate insulator between the gate and the SLG channel. Integrated circuits and other apparati having a device substrate, a thin film growth substrate formed directly on at least a portion of the device substrate, and graphene formed directly on at least a portion of the thin film growth substrate are also disclosed.
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