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    Transfer-free batch fabrication of single layer graphene devices
    1.
    发明授权
    Transfer-free batch fabrication of single layer graphene devices 有权
    单层石墨烯器件的无转移批量制造

    公开(公告)号：US09362364B2

    公开(公告)日：2016-06-07

    申请号：US13384663

    申请日：2010-07-21

    申请人： Jiwoong Park ,  Carlos Ruiz-Vargas ,  Mark Philip Levendorf ,  Lola Brown

    发明人： Jiwoong Park ,  Carlos Ruiz-Vargas ,  Mark Philip Levendorf ,  Lola Brown

    IPC分类号： H01L21/20 ,  H01L29/16 ,  H01L21/8258 ,  H01L27/12 ,  H01L29/417 ,  H01L29/778 ,  H01L29/786

    CPC分类号： H01L29/1606 ,  H01L21/8258 ,  H01L27/1207 ,  H01L29/41733 ,  H01L29/7781 ,  H01L29/78603 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78684

    摘要： A method of manufacturing one or more graphene devices is disclosed. A thin film growth substrate is formed directly on a device substrate. Graphene is formed on the thin film growth substrate. A transistor is also disclosed, having a device substrate and a source supported by the device substrate. The transistor also has a drain separated from the source and supported by the device substrate. The transistor further has a single layer graphene (SLG) channel grown partially on and coupling the source and the drain. The transistor also has a gate aligned with the SLG channel, and a gate insulator between the gate and the SLG channel. Integrated circuits and other apparati having a device substrate, a thin film growth substrate formed directly on at least a portion of the device substrate, and graphene formed directly on at least a portion of the thin film growth substrate are also disclosed.

    摘要翻译： 公开了一种制造一个或多个石墨烯器件的方法。 薄膜生长衬底直接形成在器件衬底上。 在薄膜生长衬底上形成石墨烯。 还公开了具有器件基板和由器件基板支撑的源极的晶体管。 晶体管还具有与源极分离并由器件衬底支撑的漏极。 该晶体管还具有部分地生长并耦合源极和漏极的单层石墨烯（SLG）通道。 晶体管还具有与SLG沟道对准的栅极，以及栅极和SLG沟道之间的栅极绝缘体。 还公开了具有器件衬底，直接形成在器件衬底的至少一部分上的薄膜生长衬底和直接形成在薄膜生长衬底的至少一部分上的石墨烯的集成电路和其它装置。

    TRANSFER-FREE BATCH FABRICATION OF SINGLE LAYER GRAPHENE DEVICES
    2.
    发明申请
    TRANSFER-FREE BATCH FABRICATION OF SINGLE LAYER GRAPHENE DEVICES 有权
    单层石墨切片装置的无转移批量生产

    公开(公告)号：US20120168724A1

    公开(公告)日：2012-07-05

    申请号：US13384663

    申请日：2010-07-21

    申请人： Jiwoong Park ,  Carlos Ruiz-Vargas ,  Mark Philip Levendorf ,  Lola Brown

    发明人： Jiwoong Park ,  Carlos Ruiz-Vargas ,  Mark Philip Levendorf ,  Lola Brown

    IPC分类号： H01L29/775 ,  H01L21/20

    CPC分类号： H01L29/1606 ,  H01L21/8258 ,  H01L27/1207 ,  H01L29/41733 ,  H01L29/7781 ,  H01L29/78603 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78684

    摘要： A method of manufacturing one or more graphene devices is disclosed. A thin film growth substrate is formed directly on a device substrate. Graphene is formed on the thin film growth substrate. A transistor is also disclosed, having a device substrate and a source supported by the device substrate. The transistor also has a drain separated from the source and supported by the device substrate. The transistor further has a single layer graphene (SLG) channel grown partially on and coupling the source and the drain. The transistor also has a gate aligned with the SLG channel, and a gate insulator between the gate and the SLG channel. Integrated circuits and other apparati having a device substrate, a thin film growth substrate formed directly on at least a portion of the device substrate, and graphene formed directly on at least a portion of the thin film growth substrate are also disclosed.

    摘要翻译： 公开了一种制造一个或多个石墨烯器件的方法。 薄膜生长衬底直接形成在器件衬底上。 在薄膜生长衬底上形成石墨烯。 还公开了具有器件基板和由器件基板支撑的源极的晶体管。 晶体管还具有与源极分离并由器件衬底支撑的漏极。 该晶体管还具有部分地生长并耦合源极和漏极的单层石墨烯（SLG）通道。 晶体管还具有与SLG沟道对准的栅极，以及栅极和SLG沟道之间的栅极绝缘体。 还公开了具有器件衬底，直接形成在器件衬底的至少一部分上的薄膜生长衬底和直接形成在薄膜生长衬底的至少一部分上的石墨烯的集成电路和其它装置。