发明申请
- 专利标题: FAST POWER-ON BIAS CIRCUIT
- 专利标题(中): 快速上电偏置电路
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申请号: US13341483申请日: 2011-12-30
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公开(公告)号: US20120169412A1公开(公告)日: 2012-07-05
- 发明人: Wayne Dettloff , John Wilson , Lei Luo , Brian Leibowitz , Jared Zerbe , Pravin Kumar Venkatesan
- 申请人: Wayne Dettloff , John Wilson , Lei Luo , Brian Leibowitz , Jared Zerbe , Pravin Kumar Venkatesan
- 申请人地址: US CA Sunnyvale
- 专利权人: Rambus Inc.
- 当前专利权人: Rambus Inc.
- 当前专利权人地址: US CA Sunnyvale
- 主分类号: G05F3/08
- IPC分类号: G05F3/08
摘要:
Conventional bias circuits exhibit a number of limitations, including the time required to power-up a bias circuit following a low-power state. Large current surges in the supply network induce ringing, further complicating a power-up process. Example embodiments reduce power-up time and minimize current surges in the supply by selectively charging and discharging capacitance to the circuit during power-up and power-down of the bias circuit.
公开/授权文献
- US08618869B2 Fast power-on bias circuit 公开/授权日:2013-12-31