发明申请
- 专利标题： COPPER METAL FILM, METHOD FOR PRODUCING SAME, COPPER METAL PATTERN, CONDUCTIVE WIRING LINE USING THE COPPER METAL PATTERN, COPPER METAL BUMP, HEAT CONDUCTION PATH, BONDING MATERIAL, AND LIQUID COMPOSITION
- 专利标题（中）： 铜金属膜，其制造方法，铜金属图案，使用铜金属图案的导电布线，铜金属布，热导电路，粘合材料和液体组合物
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申请号： US13496550申请日： 2010-09-13
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公开(公告)号： US20120175147A1公开(公告)日： 2012-07-12
- 发明人: Hideo Nakako , Kazunori Yamamoto , Yasushi Kumashiro , Shunya Yokosawa , Katsuyuki Masuda , Yoshinori Ejiri , Maki Inada , Kyoko Kuroda
- 申请人： Hideo Nakako , Kazunori Yamamoto , Yasushi Kumashiro , Shunya Yokosawa , Katsuyuki Masuda , Yoshinori Ejiri , Maki Inada , Kyoko Kuroda
- 优先权： JP2009-215003 20090916
- 国际申请： PCT/JP2010/065698 WO 20100913
- 主分类号： H01B5/00
- IPC分类号： H01B5/00 ; B05D3/10 ; B05D1/12 ; C09D11/02 ; B32B37/00 ; B32B15/01 ; B32B15/00 ; B05D3/00 ; B05D3/06
摘要：
Disclosed are: a copper metal film which has good adhesion to a substrate, low volume resistivity, and good deep-part metal properties; and a method for producing a copper metal film, wherein the copper metal film can be produced by reducing a substrate to a deep part thereof without damaging the substrate. Specifically disclosed is a copper metal film obtained by treating a copper-based particle deposition layer containing both copper oxides and a metallic transition metal or alloy, or a transition metal complex containing a metal element, with gaseous formic acid and/or formaldehyde heated to 120° C. or higher. The copper oxide is preferably copper (I) oxide and/or copper (II) oxide. The transition metal, alloy or metal complex are preferably a metal selected from the group consisting of Cu, Pd, Pt, Ni, Ag, Au and Rh, an alloy containing the metal, or a complex containing the metal element, respectively.
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