Organic Field Effect Transistor
    9.
    发明申请
    Organic Field Effect Transistor 审中-公开
    有机场效应晶体管

    公开(公告)号:US20090134386A1

    公开(公告)日:2009-05-28

    申请号:US12195560

    申请日:2008-08-21

    IPC分类号: H01L51/05 H01L51/40

    摘要: An organic field-effect transistor has a gate insulating layer comprising a cured epoxy resin. The epoxy resin has a lower concentration of trapping centres compared with a conventional epoxy resin in which trapping centres are provided by hydroxyl (OH) groups. The lower concentration of trapping centres can be achieved by reducing the number of hydroxyl groups throughout the layer and/or by reducing the number of hydroxyl groups in a surface region.

    摘要翻译: 有机场效应晶体管具有包含固化的环氧树脂的栅极绝缘层。 与其中由羟基(OH)基团提供捕集中心的常规环氧树脂相比,环氧树脂具有较低的捕集中心浓度。 通过减少整个层中的羟基数量和/或通过减少表面区域中的羟基数可以实现较低浓度的捕获中心。