发明申请
- 专利标题： Semiconductor Device and Method of Manufacturing Thereof
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13007392申请日： 2011-01-14
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公开(公告)号： US20120181656A1公开(公告)日： 2012-07-19
- 发明人: Wolfgang Lehnert , Michael Stadtmueller , Stefan Pompl , Markus Meyer
- 申请人： Wolfgang Lehnert , Michael Stadtmueller , Stefan Pompl , Markus Meyer
- 主分类号： H01L29/92
- IPC分类号： H01L29/92 ; H01L27/08 ; H01L21/329
摘要：
A method for manufacturing a semiconductor device and a semiconductor device are disclosed. The method comprises forming a trench in a substrate, partially filling the trench with a first semiconductive material, forming an interface along a surface of the first semiconductive material, and filling the trench with a second semiconductive material. The semiconductor device includes a first electrode arranged along sidewalls of a trench and a dielectric arranged over the first electrode. The semiconductor device further includes a second electrode at least partially filling the trench, wherein the second electrode comprises an interface within the second electrode.
公开/授权文献
- US08685828B2 Method of forming a capacitor 公开/授权日：2014-04-01
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