发明申请
- 专利标题： SELECTIVE POLYMER GROWTH ON A SEMICONDUCTOR SUBSTRATE
- 专利标题（中）： 半导体基板上的选择性聚合物生长
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申请号： US13438336申请日： 2012-04-03
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公开(公告)号： US20120190194A1公开(公告)日： 2012-07-26
- 发明人: Eyal Bar-sadeh , Nuriel Amir , Alexander Ripp , Yakov Shor , Dror Horvitz
- 申请人： Eyal Bar-sadeh , Nuriel Amir , Alexander Ripp , Yakov Shor , Dror Horvitz
- 主分类号： H01L21/312
- IPC分类号： H01L21/312 ; H01L21/3205
摘要：
Method and systems provide growth of polymer structures at a high rate in a selective manner. In various embodiments, the method or system can expose the growth site to a polymer source and growing a polymer tube at a rate of at least 80 micrometer per hour at the growth site. The method or system can provide selectivity by providing a growth site on a substrate by patterning a metal, such as copper, that provides a seed site for the polymer. Non-selected sites can be coated with a polymer growth inhibitor, such as polyimide or silicon nitride.
公开/授权文献
- US08569103B2 Selective polymer growth on a semiconductor substrate 公开/授权日：2013-10-29
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