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    Selective polymer growth on a semiconductor substrate
    1.
    发明授权
    Selective polymer growth on a semiconductor substrate 有权
    在半导体衬底上选择性聚合物生长

    公开(公告)号：US08569103B2

    公开(公告)日：2013-10-29

    申请号：US13438336

    申请日：2012-04-03

    申请人： Eyal Bar-sadeh ,  Nuriel Amir ,  Alexander Ripp ,  Yakov Shor ,  Dror Horvitz

    发明人： Eyal Bar-sadeh ,  Nuriel Amir ,  Alexander Ripp ,  Yakov Shor ,  Dror Horvitz

    IPC分类号： H01L51/40

    CPC分类号： H01L21/312 ,  B81C1/00111 ,  H01L21/02112 ,  H01L23/3677 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Method and systems provide growth of polymer structures at a high rate in a selective manner. In various embodiments, the method or system can expose the growth site to a polymer source and growing a polymer tube at a rate of at least 80 micrometer per hour at the growth site. The method or system can provide selectivity by providing a growth site on a substrate by patterning a metal, such as copper, that provides a seed site for the polymer. Non-selected sites can be coated with a polymer growth inhibitor, such as polyimide or silicon nitride.

    摘要翻译： 方法和系统以选择性方式以高速率提供聚合物结构的生长。 在各种实施方案中，该方法或系统可以将生长位点暴露于聚合物源，并在生长位点以至少80微米/小时的速率生长聚合物管。 该方法或系统可以通过为提供聚合物的种子位点的金属（例如铜）图案提供基底上的生长位点来提供选择性。 非选择的部位可以用聚合物生长抑制剂如聚酰亚胺或氮化硅涂覆。

    High rate selective polymer growth on a substrate
    2.
    发明授权
    High rate selective polymer growth on a substrate 有权
    在基材上高速选择性聚合物生长

    公开(公告)号：US08183085B2

    公开(公告)日：2012-05-22

    申请号：US12416094

    申请日：2009-03-31

    申请人： Eyal Bar-sadeh ,  Nuriel Amir ,  Alexander Ripp ,  Yakov Shor ,  Dror Horvitz

    发明人： Eyal Bar-sadeh ,  Nuriel Amir ,  Alexander Ripp ,  Yakov Shor ,  Dror Horvitz

    IPC分类号： H01L51/40

    CPC分类号： H01L21/312 ,  B81C1/00111 ,  H01L21/02112 ,  H01L23/3677 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Method and systems provide growth of polymer structures at a high rate in a selective manner. In various embodiments, the method or system can expose the growth site to a polymer source and growing a polymer tube at a rate of at least 80 micrometer per hour at the growth site. The method or system can provide selectivity by providing a growth site on a substrate by patterning a metal, such as copper, that provides a seed site for the polymer. Non-selected sites can be coated with a polymer growth inhibitor, such as polyimide or silicon nitride.

    摘要翻译： 方法和系统以选择性方式以高速率提供聚合物结构的生长。 在各种实施方案中，该方法或系统可以将生长位点暴露于聚合物源，并在生长位点以至少80微米/小时的速率生长聚合物管。 该方法或系统可以通过为提供聚合物的种子位点的金属（例如铜）图案提供基底上的生长位点来提供选择性。 非选择的部位可以用聚合物生长抑制剂如聚酰亚胺或氮化硅涂覆。

    HIGH RATE SELECTIVE POLYMER GROWTH ON A SUBSTRATE
    3.
    发明申请
    HIGH RATE SELECTIVE POLYMER GROWTH ON A SUBSTRATE 有权
    基板上的高速选择性聚合物增长

    公开(公告)号：US20100243306A1

    公开(公告)日：2010-09-30

    申请号：US12416094

    申请日：2009-03-31

    申请人： Eyal Bar-sadeh ,  Nuriel Amir ,  Alexander Ripp ,  Yakov Shor ,  Dror Horvitz

    发明人： Eyal Bar-sadeh ,  Nuriel Amir ,  Alexander Ripp ,  Yakov Shor ,  Dror Horvitz

    IPC分类号： H05K1/18 ,  B05D3/00

    CPC分类号： H01L21/312 ,  B81C1/00111 ,  H01L21/02112 ,  H01L23/3677 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Method and systems provide growth of polymer structures at a high rate in a selective manner. In various embodiments, the method or system can expose the growth site to a polymer source and growing a polymer tube at a rate of at least 80 micrometer per hour at the growth site. The method or system can provide selectivity by providing a growth site on a substrate by patterning a metal, such as copper, that provides a seed site for the polymer. Non-selected sites can be coated with a polymer growth inhibitor, such as polyimide or silicon nitride.

    摘要翻译： 方法和系统以选择性方式以高速率提供聚合物结构的生长。 在各种实施方案中，该方法或系统可以将生长位点暴露于聚合物源，并在生长位点以至少80微米/小时的速率生长聚合物管。 该方法或系统可以通过为提供聚合物的种子位点的金属（例如铜）图案提供基底上的生长位点来提供选择性。 非选择的部位可以用聚合物生长抑制剂如聚酰亚胺或氮化硅涂覆。

    SELECTIVE POLYMER GROWTH ON A SEMICONDUCTOR SUBSTRATE
    4.
    发明申请
    SELECTIVE POLYMER GROWTH ON A SEMICONDUCTOR SUBSTRATE 有权
    半导体基板上的选择性聚合物生长

    公开(公告)号：US20120190194A1

    公开(公告)日：2012-07-26

    申请号：US13438336

    申请日：2012-04-03

    申请人： Eyal Bar-sadeh ,  Nuriel Amir ,  Alexander Ripp ,  Yakov Shor ,  Dror Horvitz

    发明人： Eyal Bar-sadeh ,  Nuriel Amir ,  Alexander Ripp ,  Yakov Shor ,  Dror Horvitz

    IPC分类号： H01L21/312 ,  H01L21/3205

    CPC分类号： H01L21/312 ,  B81C1/00111 ,  H01L21/02112 ,  H01L23/3677 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Method and systems provide growth of polymer structures at a high rate in a selective manner. In various embodiments, the method or system can expose the growth site to a polymer source and growing a polymer tube at a rate of at least 80 micrometer per hour at the growth site. The method or system can provide selectivity by providing a growth site on a substrate by patterning a metal, such as copper, that provides a seed site for the polymer. Non-selected sites can be coated with a polymer growth inhibitor, such as polyimide or silicon nitride.

    摘要翻译： 方法和系统以选择性方式以高速率提供聚合物结构的生长。 在各种实施方案中，该方法或系统可以将生长位点暴露于聚合物源，并在生长位点以至少80微米/小时的速率生长聚合物管。 该方法或系统可以通过为提供聚合物的种子位点的金属（例如铜）图案提供基底上的生长位点来提供选择性。 非选择的部位可以用聚合物生长抑制剂如聚酰亚胺或氮化硅涂覆。

    Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets
    6.
    发明授权
    Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets 有权
    OVL的设备相关度量（DCM）与嵌入式SEM结构覆盖目标

    公开(公告)号：US09093458B2

    公开(公告)日：2015-07-28

    申请号：US13776550

    申请日：2013-02-25

    申请人： Nuriel Amir ,  DongSub Choi ,  Tal Itzkovich ,  Daniel Kandel

    发明人： Nuriel Amir ,  DongSub Choi ,  Tal Itzkovich ,  Daniel Kandel

    IPC分类号： H01L23/544 ,  H01L21/66 ,  G03F7/20

    CPC分类号： H01L23/544 ,  G03F7/70633 ,  G03F7/70683 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Aspects of the present disclosure describe a target for use in measuring a relative position between two substantially coplanar layers of a device. The target includes periodic structures in first and second layers. Differences in relative position of the first and the second layers between the first and second periodic structures and the respective device-like structure can be measured to correct the relative position of the first and the second layers between the first and second periodic structures. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    摘要翻译： 本公开的方面描述了用于测量设备的两个基本上共面的层之间的相对位置的目标。 目标包括第一层和第二层中的周期性结构。 可以测量第一和第二周期结构之间的第一和第二层的相对位置与相应的器件状结构之间的差异，以校正第一和第二周期结构之间的第一和第二层的相对位置。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

    DEVICE CORRELATED METROLOGY (DCM) FOR OVL WITH EMBEDDED SEM STRUCTURE OVERLAY TARGETS
    7.
    发明申请
    DEVICE CORRELATED METROLOGY (DCM) FOR OVL WITH EMBEDDED SEM STRUCTURE OVERLAY TARGETS 有权
    具有嵌入式扫描电镜结构覆盖目标的OVL的器件相关公制（DCM）

    公开(公告)号：US20140065736A1

    公开(公告)日：2014-03-06

    申请号：US13776550

    申请日：2013-02-25

    申请人： Nuriel Amir ,  DongSub Choi ,  Tal Itzkovich ,  Daniel Kandel

    发明人： Nuriel Amir ,  DongSub Choi ,  Tal Itzkovich ,  Daniel Kandel

    IPC分类号： H01L23/544

    CPC分类号： H01L23/544 ,  G03F7/70633 ,  G03F7/70683 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Aspects of the present disclosure describe a target for use in measuring a relative position between two substantially coplanar layers of a device. The target includes periodic structures in first and second layers. Differences in relative position of the first and the second layers between the first and second periodic structures and the respective device-like structure can be measured to correct the relative position of the first and the second layers between the first and second periodic structures. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    摘要翻译： 本公开的方面描述了用于测量设备的两个基本上共面的层之间的相对位置的目标。 目标包括第一层和第二层中的周期性结构。 可以测量第一和第二周期结构之间的第一和第二层的相对位置与相应的器件状结构之间的差异，以校正第一和第二周期结构之间的第一和第二层的相对位置。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

    Forming memory arrays
    10.
    发明申请
    Forming memory arrays 审中-公开
    形成内存数组

    公开(公告)号：US20070235776A1

    公开(公告)日：2007-10-11

    申请号：US11394015

    申请日：2006-03-30

    申请人： Nuriel Amir

    发明人： Nuriel Amir

    IPC分类号： H01L29/772 ,  H01L21/8234

    CPC分类号： H01L27/115 ,  H01L27/11521

    摘要： Source strap cells which are manufactured in a very similar way to conventional memory cells may be utilized to enable connections to the source of a memory cell. In other words, the source and the drain may be contacted by vias which are arranged identically in some embodiments. This may result in greater symmetry, reduced die size, and greater manufacturing efficiencies in some embodiments.

    摘要翻译： 以与传统存储器单元非常相似的方式制造的源极带单元可以用于使得能够连接到存储器单元的源极。 换句话说，在一些实施例中，源极和漏极可以被相同地布置的通孔接触。 在一些实施例中，这可能导致更大的对称性，减小的管芯尺寸和更高的制造效率。