发明申请
- 专利标题： DEVICE AND METHOD OF REDUCING JUNCTION LEAKAGE
- 专利标题（中）： 减少接头泄漏的装置和方法
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申请号： US13446602申请日： 2012-04-13
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公开(公告)号： US20120193710A1公开(公告)日： 2012-08-02
- 发明人: Kanggou Cheng , Bruce B. Doris , Ali Khakifirooz , Pranita Kulkarni , Ghavam G. Shahidi
- 申请人： Kanggou Cheng , Bruce B. Doris , Ali Khakifirooz , Pranita Kulkarni , Ghavam G. Shahidi
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A device and method for reducing junction leakage in a semiconductor junction includes forming a faceted raised structure in a source/drain region of the device. Dopants are diffused from the faceted raised structure into a substrate below the faceted raised structure to form source/drain regions. A sprinkle implantation is applied on the faceted raised structure to produce a multi-depth dopant profile in the substrate for the source/drain regions.
公开/授权文献
- US08404540B2 Device and method of reducing junction leakage 公开/授权日：2013-03-26
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