公开(公告)号：US20120193710A1

公开(公告)日：2012-08-02

申请号：US13446602

申请日：2012-04-13

申请人： Kanggou Cheng ,  Bruce B. Doris ,  Ali Khakifirooz ,  Pranita Kulkarni ,  Ghavam G. Shahidi

发明人： Kanggou Cheng ,  Bruce B. Doris ,  Ali Khakifirooz ,  Pranita Kulkarni ,  Ghavam G. Shahidi

IPC分类号： H01L29/78

CPC分类号： H01L29/66628 ,  H01L21/26513 ,  H01L29/0847 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7834

摘要： A device and method for reducing junction leakage in a semiconductor junction includes forming a faceted raised structure in a source/drain region of the device. Dopants are diffused from the faceted raised structure into a substrate below the faceted raised structure to form source/drain regions. A sprinkle implantation is applied on the faceted raised structure to produce a multi-depth dopant profile in the substrate for the source/drain regions.

摘要翻译： 用于减少半导体结中的结漏电的器件和方法包括在器件的源极/漏极区域中形成刻面的凸起结构。 掺杂剂从小面凸起结构扩散到小平面凸起结构下面的基底中以形成源极/漏极区域。 在刻面凸起结构上施加喷洒注入，以在源/漏区的衬底中产生多深度掺杂物分布。