发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND STRUCTURE
- 专利标题（中）： 半导体器件和结构
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申请号： US12904119申请日： 2010-10-13
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公开(公告)号： US20120193719A1公开(公告)日： 2012-08-02
- 发明人: Zvi Or-Bach , Brian Cronquist , Isreal Beinglass , J.L. de Jong , Deepak C. Sekar
- 申请人： Zvi Or-Bach , Brian Cronquist , Isreal Beinglass , J.L. de Jong , Deepak C. Sekar
- 主分类号： H01L27/088
- IPC分类号： H01L27/088
摘要：
A device comprising semiconductor memories, the device comprising: a first layer and a second layer of layer-transferred mono-crystallized silicon, wherein the first layer comprises a first plurality of horizontally-oriented transistors; wherein the second layer comprises a second plurality of horizontally-oriented transistors; and wherein the second plurality of horizontally-oriented transistors overlays the first plurality of horizontally-oriented transistors.
公开/授权文献
- US08476145B2 Method of fabricating a semiconductor device and structure 公开/授权日：2013-07-02
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