发明申请
- 专利标题: OPTICAL SEMICONDUCTOR DEVICE
- 专利标题(中): 光学半导体器件
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申请号: US13356104申请日: 2012-01-23
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公开(公告)号: US20120193740A1公开(公告)日: 2012-08-02
- 发明人: Yoshiyuki Doi , Yoshifumi Muramoto , Takaharu Ohyama
- 申请人: Yoshiyuki Doi , Yoshifumi Muramoto , Takaharu Ohyama
- 申请人地址: JP Yokohama-shi JP Tokyo
- 专利权人: NTT ELECTRONICS CORPORATION,NIPPON TELEGRAPH AND TELEPHONE CORPORATION
- 当前专利权人: NTT ELECTRONICS CORPORATION,NIPPON TELEGRAPH AND TELEPHONE CORPORATION
- 当前专利权人地址: JP Yokohama-shi JP Tokyo
- 优先权: JP2011-015580 20110127
- 主分类号: H01L31/0232
- IPC分类号: H01L31/0232
摘要:
The present invention is intended to provide a compact and simple optical semiconductor device that reduces crosstalk (leakage current) between light receiving elements. According to the present invention, since a back surface electrode is a mirror-like thin film, crosstalk to an adjacent light receiving element can be suppressed, thereby reducing a detection error of a light intensity. By disposing a patterned back surface electrode or by disposing an ohmic electrode at the bottom of an insulating film over the whole back surface, contact resistance on the back surface can be reduced. By using the optical semiconductor elements with a two-dimensional arrangement and by using a mirror-like thin film as the back surface electrode, crosstalk can be reduced. By accommodating the optical semiconductor elements in the housing in a highly hermetic condition, the optical semiconductor elements can be protected from an external environment.
公开/授权文献
- US08704322B2 Optical semiconductor device 公开/授权日:2014-04-22
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