发明申请
US20120193756A1 DIODES WITH NATIVE OXIDE REGIONS FOR USE IN MEMORY ARRAYS AND METHODS OF FORMING THE SAME
有权
具有用于存储器阵列的内部氧化物区域的二极体及其形成方法
- 专利标题： DIODES WITH NATIVE OXIDE REGIONS FOR USE IN MEMORY ARRAYS AND METHODS OF FORMING THE SAME
- 专利标题（中）： 具有用于存储器阵列的内部氧化物区域的二极体及其形成方法
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申请号： US13020007申请日： 2011-02-02
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公开(公告)号： US20120193756A1公开(公告)日： 2012-08-02
- 发明人: Steven Maxwell , Abhijit Bandyopadhyay , Kun Hou , Er-Xuan Ping , Yung-Tin Chen , Li Xiao
- 申请人： Steven Maxwell , Abhijit Bandyopadhyay , Kun Hou , Er-Xuan Ping , Yung-Tin Chen , Li Xiao
- 主分类号： H01L29/861
- IPC分类号： H01L29/861 ; H01L21/36 ; H01L29/92
摘要：
In a first aspect, a vertical semiconductor diode is provided that includes (1) a first semiconductor layer formed above a substrate; (2) a second semiconductor layer formed above the first semiconductor layer; (3) a first native oxide layer formed above the first semiconductor layer; and (4) a third semiconductor layer formed above the first semiconductor layer, second semiconductor layer and first native oxide layer so as to form the vertical semiconductor diode that includes the first native oxide layer. Numerous other aspects are provided.
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