发明申请
US20120194316A1 FUSE BOX STRUCTURE IN SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME
审中-公开
半导体装置中的保险丝盒结构及其制造方法
- 专利标题： FUSE BOX STRUCTURE IN SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体装置中的保险丝盒结构及其制造方法
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申请号： US13440899申请日： 2012-04-05
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公开(公告)号： US20120194316A1公开(公告)日： 2012-08-02
- 发明人: Jeong Guen PARK
- 申请人： Jeong Guen PARK
- 优先权： KR10-2009-0022555 20090317
- 主分类号： H01H85/20
- IPC分类号： H01H85/20
摘要：
A fuse box structure includes a first fuse, an insulating film formed on the first fuse, and a second fuse disposed on the insulating film to partially overlap the first fuse. Each of the first and second fuse includes a main portion and one or more cutting portions connected to the main portion. The configuration of the first and second fuse requires a reduced area of occupancy of the fuse box structure.
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