METHOD OF FORMING RESISTOR OF SEMICONDUCTOR MEMORY DEVICE AND STRUCTURE THEREOF
    1.
    发明申请
    METHOD OF FORMING RESISTOR OF SEMICONDUCTOR MEMORY DEVICE AND STRUCTURE THEREOF 审中-公开
    形成半导体存储器件电阻的方法及其结构

    公开(公告)号:US20130221487A1

    公开(公告)日:2013-08-29

    申请号:US13604468

    申请日:2012-09-05

    申请人: Jeong Guen PARK

    发明人: Jeong Guen PARK

    IPC分类号: H01L29/86 H01L21/02

    摘要: A resistor in a semiconductor memory device is formed by the steps of, inter alia: forming a first helical resistor extending from a first point toward a center in a clockwise or counterclockwise direction, forming a second helical resistor extending from the center to a second point in an opposite direction, wherein the first and second helical resistors are connected to each other at the center, and wherein the first and second helical resistors do not overlap.

    摘要翻译: 通过以下步骤形成半导体存储器件中的电阻器,其特征在于:形成从第一点向顺时针或逆时针方向的中心延伸的第一螺旋电阻器,形成从中心延伸到第二点的第二螺旋电阻器 在相反方向上,其中所述第一和第二螺旋电阻器在中心彼此连接,并且其中所述第一和第二螺旋电阻器不重叠。

    FUSE BOX STRUCTURE IN SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    FUSE BOX STRUCTURE IN SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体装置中的保险丝盒结构及其制造方法

    公开(公告)号:US20120194316A1

    公开(公告)日:2012-08-02

    申请号:US13440899

    申请日:2012-04-05

    申请人: Jeong Guen PARK

    发明人: Jeong Guen PARK

    IPC分类号: H01H85/20

    摘要: A fuse box structure includes a first fuse, an insulating film formed on the first fuse, and a second fuse disposed on the insulating film to partially overlap the first fuse. Each of the first and second fuse includes a main portion and one or more cutting portions connected to the main portion. The configuration of the first and second fuse requires a reduced area of occupancy of the fuse box structure.

    摘要翻译: 保险丝盒结构包括第一保险丝,形成在第一保险丝上的绝缘膜,以及布置在绝缘膜上以与第一保险丝部分重叠的第二保险丝。 第一和第二保险丝中的每一个包括连接到主要部分的主要部分和一个或多个切割部分。 第一和第二保险丝的配置需要减小保险丝盒结构的占用面积。

    FUSE BOX STRUCTURE IN SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    FUSE BOX STRUCTURE IN SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体装置中的保险丝盒结构及其制造方法

    公开(公告)号:US20100237979A1

    公开(公告)日:2010-09-23

    申请号:US12494601

    申请日:2009-06-30

    申请人: Jeong Guen PARK

    发明人: Jeong Guen PARK

    IPC分类号: H01H85/20 H01H69/02

    摘要: A fuse box structure includes a first fuse, an insulating film formed on the first fuse, and a second fuse disposed on the insulating film to partially overlap the first fuse. Each of the first and second fuse includes a main portion and one or more cutting portions connected to the main portion. The configuration of the first and second fuse requires a reduced area of occupancy of the fuse box structure.

    摘要翻译: 保险丝盒结构包括第一保险丝,形成在第一保险丝上的绝缘膜,以及布置在绝缘膜上以与第一保险丝部分重叠的第二保险丝。 第一和第二保险丝中的每一个包括连接到主要部分的主要部分和一个或多个切割部分。 第一和第二保险丝的配置需要减小保险丝盒结构的占用面积。