摘要:
A resistor in a semiconductor memory device is formed by the steps of, inter alia: forming a first helical resistor extending from a first point toward a center in a clockwise or counterclockwise direction, forming a second helical resistor extending from the center to a second point in an opposite direction, wherein the first and second helical resistors are connected to each other at the center, and wherein the first and second helical resistors do not overlap.
摘要:
A fuse box structure includes a first fuse, an insulating film formed on the first fuse, and a second fuse disposed on the insulating film to partially overlap the first fuse. Each of the first and second fuse includes a main portion and one or more cutting portions connected to the main portion. The configuration of the first and second fuse requires a reduced area of occupancy of the fuse box structure.
摘要:
A fuse box structure includes a first fuse, an insulating film formed on the first fuse, and a second fuse disposed on the insulating film to partially overlap the first fuse. Each of the first and second fuse includes a main portion and one or more cutting portions connected to the main portion. The configuration of the first and second fuse requires a reduced area of occupancy of the fuse box structure.