发明申请
- 专利标题： RESISTOR FILM FOR BOLOMETER
- 专利标题（中）： 电阻膜电阻
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申请号： US13393556申请日： 2010-09-01
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公开(公告)号： US20120196150A1公开(公告)日： 2012-08-02
- 发明人: Tetsuo Tsuchiya , Masami Nishikawa , Tomohiko Nakajima , Toshiya Kumagai , Takaaki Manabe
- 申请人： Tetsuo Tsuchiya , Masami Nishikawa , Tomohiko Nakajima , Toshiya Kumagai , Takaaki Manabe
- 申请人地址： JP Tokyo
- 专利权人： National Institute of Advance Industrial Science and Technology
- 当前专利权人： National Institute of Advance Industrial Science and Technology
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-203691 20090903
- 国际申请： PCT/JP2010/064910 WO 20100901
- 主分类号： C01G31/02
- IPC分类号： C01G31/02 ; B32B9/00 ; C08J7/18 ; B05D3/02 ; B05D3/06
摘要：
Provided is a resistor film comprising vanadium oxide as a main component, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, there is no hysteresis in a resistance change in response to temperature variations or the temperature width is small at less than 1.5K even if there is hysteresis, and highly accurate measurement can be provided when used in a bolometer.Upon producing the resistor film comprising vanadium oxide as a main component by treating a coating film of an organovanadium compound via laser irradiation or the like, a crystalline phase and a noncrystalline (amorphous) phase are caused to coexist in the resistor film.
公开/授权文献
- US08871363B2 Resistor film for bolometer 公开/授权日：2014-10-28
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