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公开(公告)号：US08871363B2
公开(公告)日：2014-10-28
申请号：US13393556
申请日：2010-09-01
IPC分类号： B32B5/14 , B32B9/00 , C01G31/02 , G01J5/20 , H01C3/04 , H01C17/065 , H01C7/02 , G01J5/02 , G01J5/04
CPC分类号： H01C17/06533 , C01G31/02 , C01P2002/02 , C01P2002/04 , C01P2002/80 , C01P2006/90 , G01J5/024 , G01J5/046 , G01J5/20 , H01C7/026 , H01L21/02565 , H01L21/02581 , Y10T428/12458 , Y10T428/12493 , Y10T428/12611
摘要： Provided is a resistor film comprising vanadium oxide as a main component, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, there is no hysteresis in a resistance change in response to temperature variations or the temperature width is small at less than 1.5K even if there is hysteresis, and highly accurate measurement can be provided when used in a bolometer.Upon producing the resistor film comprising vanadium oxide as a main component by treating a coating film of an organovanadium compound via laser irradiation or the like, a crystalline phase and a noncrystalline (amorphous) phase are caused to coexist in the resistor film.
摘要翻译： 提供了包含氧化钒作为主要成分的电阻膜，其中金属 - 绝缘体转变在室温附近在电阻的温度变化中表示，在温度变化或电流变化的电阻变化中没有迟滞 温度宽度小于1.5K，即使有迟滞，并且在测辐射热计中使用时可以提供高精度的测量。 通过经由激光照射等处理有机体化合物的涂膜而制造包含氧化钒作为主要成分的电阻膜时，结晶相和非结晶（非晶）相共存在电阻膜中。
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公开(公告)号：US20120196150A1
公开(公告)日：2012-08-02
申请号：US13393556
申请日：2010-09-01
CPC分类号： H01C17/06533 , C01G31/02 , C01P2002/02 , C01P2002/04 , C01P2002/80 , C01P2006/90 , G01J5/024 , G01J5/046 , G01J5/20 , H01C7/026 , H01L21/02565 , H01L21/02581 , Y10T428/12458 , Y10T428/12493 , Y10T428/12611
摘要： Provided is a resistor film comprising vanadium oxide as a main component, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, there is no hysteresis in a resistance change in response to temperature variations or the temperature width is small at less than 1.5K even if there is hysteresis, and highly accurate measurement can be provided when used in a bolometer.Upon producing the resistor film comprising vanadium oxide as a main component by treating a coating film of an organovanadium compound via laser irradiation or the like, a crystalline phase and a noncrystalline (amorphous) phase are caused to coexist in the resistor film.
摘要翻译： 提供了包含氧化钒作为主要成分的电阻膜，其中金属 - 绝缘体转变在室温附近在电阻的温度变化中表示，在温度变化或电流变化的电阻变化中没有迟滞 温度宽度小于1.5K，即使有迟滞，并且在测辐射热计中使用时可以提供高精度的测量。 通过经由激光照射等处理有机体化合物的涂膜而制造包含氧化钒作为主要成分的电阻膜时，结晶相和非结晶（非晶）相共存在电阻膜中。
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3.发明授权Rare earth-Ba-Cu complex composition and method of producing superconductor using same 失效稀土 - Ba-Cu络合物的组成及使用其制造超导体的方法公开(公告)号：US06774088B2
公开(公告)日：2004-08-10
申请号：US10086377
申请日：2002-03-04
申请人： Takaaki Manabe , Iwao Yamaguchi , Tetsuo Tsuchiya , Toshiya Kumagai , Susumu Mizuta , Susumu Nakamura
发明人： Takaaki Manabe , Iwao Yamaguchi , Tetsuo Tsuchiya , Toshiya Kumagai , Susumu Mizuta , Susumu Nakamura
IPC分类号： H01B100
CPC分类号： H01L39/2425 , C23C18/1216 , C23C18/1295 , Y10S505/70 , Y10S505/734 , Y10S505/741
摘要： A metal complex composition containing complexes having metal species of a rare earth element, barium and copper and ligands of a trifluoroacetic acid or pentafluoropropionic acid ligand, a pyridine ligand and an acetylacetone ligand. A superconductive film may be obtained by applying an organic solvent solution of the above metal complex composition to a substrate and by heat treating the coating.
摘要翻译： 含有具有稀土元素金属物质，钡和铜以及三氟乙酸或五氟丙酸配体配体，吡啶配体和乙酰丙酮配体的配合物的金属络合物组合物。 可以通过将上述金属络合物组合物的有机溶剂溶液涂布到基材上并通过热处理涂层来获得超导膜。
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4.发明授权公开(公告)号：US06576302B1
公开(公告)日：2003-06-10
申请号：US09513814
申请日：2000-02-25
申请人： Susumu Mizuta , Tetsuo Tsuchiya , Akio Watanabe , Yoji Imai , Iwao Yamaguchi , Toshiya Kumagai , Takaaki Manabe , Hiroyuki Niino , Akira Yabe
发明人： Susumu Mizuta , Tetsuo Tsuchiya , Akio Watanabe , Yoji Imai , Iwao Yamaguchi , Toshiya Kumagai , Takaaki Manabe , Hiroyuki Niino , Akira Yabe
IPC分类号： C08J718
CPC分类号： C23C18/14 , C23C18/06 , C23C18/1216
摘要： There is disclosed a method for producing a metal oxide, which comprises the steps of: dissolving a metal organic compound (e.g. a metal organic acid salt, a metal acetylacetonato complex, and a metal alkoxide having an organic group with 6 or more carbon atoms) in a solvent to provide a state of solution, applying the solution onto a substrate, drying the solution, and subjecting the resultant substrate to irradiation with a laser light of a 400 nm or less wavelength, to form a metal oxide on the substrate. According to that method, a metal oxide can be produced without applying a heat treatment at a high temperature of the degree adopted in the conventionally known application thermal decomposition method.
摘要翻译： 公开了一种金属氧化物的制造方法，该方法包括以下步骤：将金属有机化合物（例如金属有机酸盐，金属乙酰丙酮络合物和具有6个或更多个碳原子的有机基团的金属醇盐） 在溶剂中以提供溶液状态，将溶液施加到基材上，干燥溶液，并使所得基板对波长为400nm以下的激光进行照射，以在基板上形成金属氧化物。 根据该方法，可以在常规已知的应用热分解方法中采用的高温下进行金属氧化物而不进行热处理。
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公开(公告)号：US20080035898A1
公开(公告)日：2008-02-14
申请号：US11836387
申请日：2007-08-09
CPC分类号： H01G4/10 , C09K11/7787 , C23C18/14 , C30B23/06 , C30B25/105 , C30B29/16 , H01L39/2461
摘要： Provided is a manufacturing method of a crystallized rare-earth thin films on a glass or a silicon substrate. This manufacturing method of a crystallized metal oxide thin film includes a step of retaining an metal organic thin film or a metal oxide film containing at least one type of rare-earth metal element selected from a group comprised of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu formed on a substrate at a temperature of 250 to 600° C., and a step of crystallizing the organic metal thin film or the metal oxide film while irradiating ultraviolet radiation having a wavelength of 200 nm or less.
摘要翻译： 提供了在玻璃或硅基板上的结晶化稀土类薄膜的制造方法。 该结晶化金属氧化物薄膜的制造方法包括：保持金属有机薄膜或金属氧化物膜的工序，所述金属有机薄膜或金属氧化物膜含有选自Y，Dy，Sm，Gd中的至少一种稀土金属元素， 在250〜600℃的温度下在基板上形成的Ho，Eu，Tm，Tb，Er，Ce，Pr，Yb，La，Nd和Lu，以及将有机金属薄膜或金属氧化物 同时照射波长为200nm以下的紫外线。
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公开(公告)号：US07771531B2
公开(公告)日：2010-08-10
申请号：US11836387
申请日：2007-08-09
CPC分类号： H01G4/10 , C09K11/7787 , C23C18/14 , C30B23/06 , C30B25/105 , C30B29/16 , H01L39/2461
摘要： Provided is a manufacturing method of a crystallized rare-earth thin films on a glass or a silicon substrate. This manufacturing method of a crystallized metal oxide thin film includes a step of retaining an metal organic thin film or a metal oxide film containing at least one type of rare-earth metal element selected from a group comprised of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu formed on a substrate at a temperature of 250 to 600° C., and a step of crystallizing the organic metal thin film or the metal oxide film while irradiating ultraviolet radiation having a wavelength of 200 nm or less.
摘要翻译： 提供了在玻璃或硅基板上的结晶化稀土类薄膜的制造方法。 该结晶化金属氧化物薄膜的制造方法包括：保持金属有机薄膜或金属氧化物膜的工序，所述金属有机薄膜或金属氧化物膜含有选自Y，Dy，Sm，Gd中的至少一种稀土金属元素， 在250〜600℃的温度下在基板上形成的Ho，Eu，Tm，Tb，Er，Ce，Pr，Yb，La，Nd和Lu，以及将有机金属薄膜或金属氧化物 同时照射波长为200nm以下的紫外线。
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公开(公告)号：US20080044590A1
公开(公告)日：2008-02-21
申请号：US11839270
申请日：2007-08-15
IPC分类号： C08J7/18
CPC分类号： C09K11/7703 , C03C17/256 , C03C17/3417 , C03C2217/212 , C03C2217/228 , C03C2217/23 , C03C2217/242 , C03C2217/948 , C03C2218/116 , C03C2218/32
摘要： Provided is a manufacturing method of a high-performance phosphor thin film material that enables a crystallized pervoskite-related Ti, Zr oxide thin film to be formed on a glass or a silicon substrate. This manufacturing method of a phosphor thin film includes a step of forming an organic metal thin film or a metal oxide film obtained by adding at least one element selected from a group comprised of Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu to a metal oxide represented with a composition formula of ABO3, A2BO4, A3B2O7 (provided that there may be a deficiency at the A, B, O sites) wherein A is an element selected from Ca, Sr and Ba, and B is a metal element selected from Ti and Zr on a substrate, and a step of irradiating an ultraviolet lamp to the substrate at room temperature and thereafter irradiating an ultraviolet laser thereto while retaining the substrate at a temperature of 400° C. or less. The film is subject to oxidation treatment after being crystallized.
摘要翻译： 提供一种能够在玻璃或硅衬底上形成结晶的与渗透相关的Ti，Zr氧化物薄膜的高性能荧光体薄膜材料的制造方法。 这种荧光体薄膜的制造方法包括：形成通过添加选自由Ce，Pr，Nd，Sm，Eu，Gd，Tb等构成的组中的至少一种的有机金属薄膜或金属氧化物膜的工序， Dy，Ho，Er，Tm，Yb和Lu与由组成式ABO 3，A 2 BO 4表示的金属氧化物反应， A 3，B 2 O 7（前提是A，B，O位点可能存在缺陷），其中A是选择的元素 从Ca，Sr和Ba中选出，B是在基板上选自Ti和Zr的金属元素，以及在室温下向紫外灯照射紫外线，然后在保持基板的同时照射紫外线激光的步骤 400℃以下。 在结晶后，将该膜进行氧化处理。
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8.发明授权Solution for forming rare-earth superconductive film and production method thereof 有权稀土超导薄膜的制造方法及其制造方法公开(公告)号：US08865628B2
公开(公告)日：2014-10-21
申请号：US13514139
申请日：2010-12-09
申请人： Takaaki Manabe , Iwao Yamaguchi , Toshiya Kumagai , Mitsugu Sohma , Wakichi Kondou , Kenichi Tsukada
发明人： Takaaki Manabe , Iwao Yamaguchi , Toshiya Kumagai , Mitsugu Sohma , Wakichi Kondou , Kenichi Tsukada
CPC分类号： C01G3/006 , H01L39/2425
摘要： Provided is a coating solution where, upon producing a rare-earth superconductive composite metal oxide film by means of a coating-pyrolysis method, cracks are not generated in the heat treatment process for eliminating organic components, even when the thickness of the rare-earth superconductive film produced in a single coating is 500 nm or more, and without having to repeat the coating and annealing process. A solution for producing a rare-earth superconductive film which is made into a homogeneous solution by dissolving, in a solvent formed by adding a polyhydric alcohol to a univalent linear alcohol having a carbon number of 1 to 8 and/or water, a metal complex coordinated, relative to metal ions of a metallic species containing rare-earth elements, barium and copper, with pyridine and/or at least one type of tertiary amine, at least one type of carboxylic acid having a carbon number of 1 to 8, and, as needed, an acetylacetonato group.
摘要翻译： 提供一种涂布溶液，其中通过涂布 - 热解法在制备稀土超导复合金属氧化物膜时，即使在稀土元素的厚度方面，在用于消除有机组分的热处理过程中也不会产生裂纹 在单个涂层中制造的超导膜为500nm以上，不必重复涂布和退火处理。 一种制备稀土超导膜的方法，该稀土超导膜通过将溶解在通过将多元醇加入到碳原子数1至8的一价直链醇和/或水形成的溶剂中，形成均匀溶液，金属络合物 相对于含有稀土元素的金属物质，钡和铜与吡啶和/或至少一种叔胺，至少一种碳原子数为1至8的羧酸的金属离子相互配位，以及 根据需要，可以使用乙酰丙酮化合物。
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9.发明授权公开(公告)号：US09159898B2
公开(公告)日：2015-10-13
申请号：US14123083
申请日：2012-05-31
申请人： Hajime Kasahara , Norio Matsui , Masakazu Matsui , Naoto Edo , Kengo Nakao , Toshiya Kumagai , Takaaki Manabe , Mitsugu Sohma
发明人： Hajime Kasahara , Norio Matsui , Masakazu Matsui , Naoto Edo , Kengo Nakao , Toshiya Kumagai , Takaaki Manabe , Mitsugu Sohma
CPC分类号： H01L39/128 , C01G3/006 , H01L39/16 , H01L39/2461 , Y10T428/24355
摘要： An oxide superconducting thin film includes a substrate, and an intermediate layer and a superconducting layer provided in this order on the substrate. The intermediate layer has an average thickness of from 10 nm to 20 nm and a surface roughness Ra of 0.5 nm or less. The superconducting layer is formed on a surface of the intermediate layer and includes an oxide superconductor as a main component. A superconducting fault current limiter including the oxide superconducting thin film is also provided.
摘要翻译： 氧化物超导薄膜包括基板，以及在基板上依次设置的中间层和超导层。 中间层的平均厚度为10nm〜20nm，表面粗糙度Ra为0.5nm以下。 超导层形成在中间层的表面上，并且包括氧化物超导体作为主要成分。 还提供了包括氧化物超导薄膜的超导故障限流器。
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10.发明申请OXIDE SUPERCONDUCTOR THIN FILM, SUPERCONDUCTING FAULT CURRENT LIMITER, AND METHOD FOR MANUFACTURING OXIDE SUPERCONDUCTOR THIN FILM 有权氧化物超导体薄膜，超导故障电流限制器和制造氧化物超导体薄膜的方法公开(公告)号：US20140080714A1
公开(公告)日：2014-03-20
申请号：US14123077
申请日：2012-05-30
申请人： Kengo Nakao , Hajime Kasahara , Masakazu Matsui , Norio Matsui , Naoto Edo , Toshiya Kumagai , Takaaki Manabe , Mitsugu Sohma
发明人： Kengo Nakao , Hajime Kasahara , Masakazu Matsui , Norio Matsui , Naoto Edo , Toshiya Kumagai , Takaaki Manabe , Mitsugu Sohma
CPC分类号： H01L39/128 , C30B25/02 , C30B29/225 , H01L39/16 , H01L39/2425 , H01L39/2458 , H01L39/2461
摘要： An oxide superconducting thin film includes a substrate having a single crystal structure, the main face of the substrate and a crystal face of the single crystal structure having an angle therebetween; an intermediate layer formed on the main face of the substrate and having an axis oriented in a direction perpendicular to the crystal face; and a superconducting layer formed on the intermediate layer and containing, as a main component, an oxide superconductor having a c-axis oriented in a direction perpendicular to the surface of the intermediate layer. A superconducting fault current limiter and a method of manufacturing an oxide superconducting thin film are also provided.
摘要翻译： 氧化物超导薄膜包括具有单晶结构的衬底，衬底的主面和单晶结构的晶面之间具有角度; 中间层，其形成在所述基板的主面上，并且具有沿与所述晶面垂直的方向取向的轴; 以及形成在所述中间层上并且以包含c轴的氧化物超导体作为主要成分的超导层，所述氧化物超导体在垂直于所述中间层的表面的方向上取向。 还提供了超导故障限流器和制造氧化物超导薄膜的方法。
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