Manufacturing method and usage of crystallized metal oxide thin film
    4.
    发明授权
    Manufacturing method and usage of crystallized metal oxide thin film 有权
    结晶金属氧化物薄膜的制造方法和用途

    公开(公告)号:US07771531B2

    公开(公告)日:2010-08-10

    申请号:US11836387

    申请日:2007-08-09

    IPC分类号: C30B11/00 C30B21/02 C04B35/64

    摘要: Provided is a manufacturing method of a crystallized rare-earth thin films on a glass or a silicon substrate. This manufacturing method of a crystallized metal oxide thin film includes a step of retaining an metal organic thin film or a metal oxide film containing at least one type of rare-earth metal element selected from a group comprised of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu formed on a substrate at a temperature of 250 to 600° C., and a step of crystallizing the organic metal thin film or the metal oxide film while irradiating ultraviolet radiation having a wavelength of 200 nm or less.

    摘要翻译: 提供了在玻璃或硅基板上的结晶化稀土类薄膜的制造方法。 该结晶化金属氧化物薄膜的制造方法包括:保持金属有机薄膜或金属氧化物膜的工序,所述金属有机薄膜或金属氧化物膜含有选自Y,Dy,Sm,Gd中的至少一种稀土金属元素, 在250〜600℃的温度下在基板上形成的Ho,Eu,Tm,Tb,Er,Ce,Pr,Yb,La,Nd和Lu,以及将有机金属薄膜或金属氧化物 同时照射波长为200nm以下的紫外线。

    Manufacturing Method of Phosphor Film
    5.
    发明申请
    Manufacturing Method of Phosphor Film 审中-公开
    荧光膜的制造方法

    公开(公告)号:US20080044590A1

    公开(公告)日:2008-02-21

    申请号:US11839270

    申请日:2007-08-15

    IPC分类号: C08J7/18

    摘要: Provided is a manufacturing method of a high-performance phosphor thin film material that enables a crystallized pervoskite-related Ti, Zr oxide thin film to be formed on a glass or a silicon substrate. This manufacturing method of a phosphor thin film includes a step of forming an organic metal thin film or a metal oxide film obtained by adding at least one element selected from a group comprised of Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu to a metal oxide represented with a composition formula of ABO3, A2BO4, A3B2O7 (provided that there may be a deficiency at the A, B, O sites) wherein A is an element selected from Ca, Sr and Ba, and B is a metal element selected from Ti and Zr on a substrate, and a step of irradiating an ultraviolet lamp to the substrate at room temperature and thereafter irradiating an ultraviolet laser thereto while retaining the substrate at a temperature of 400° C. or less. The film is subject to oxidation treatment after being crystallized.

    摘要翻译: 提供一种能够在玻璃或硅衬底上形成结晶的与渗透相关的Ti,Zr氧化物薄膜的高性能荧光体薄膜材料的制造方法。 这种荧光体薄膜的制造方法包括:形成通过添加选自由Ce,Pr,Nd,Sm,Eu,Gd,Tb等构成的组中的至少一种的有机金属薄膜或金属氧化物膜的工序, Dy,Ho,Er,Tm,Yb和Lu与由组成式ABO 3,A 2 BO 4表示的金属氧化物反应, A 3,B 2 O 7(前提是A,B,O位点可能存在缺陷),其中A是选择的元素 从Ca,Sr和Ba中选出,B是在基板上选自Ti和Zr的金属元素,以及在室温下向紫外灯照射紫外线,然后在保持基板的同时照射紫外线激光的步骤 400℃以下。 在结晶后,将该膜进行氧化处理。

    Method for producing a metal oxide and method for forming a minute pattern
    6.
    发明授权
    Method for producing a metal oxide and method for forming a minute pattern 失效
    金属氧化物的制造方法及形成微小图案的方法

    公开(公告)号:US06576302B1

    公开(公告)日:2003-06-10

    申请号:US09513814

    申请日:2000-02-25

    IPC分类号: C08J718

    摘要: There is disclosed a method for producing a metal oxide, which comprises the steps of: dissolving a metal organic compound (e.g. a metal organic acid salt, a metal acetylacetonato complex, and a metal alkoxide having an organic group with 6 or more carbon atoms) in a solvent to provide a state of solution, applying the solution onto a substrate, drying the solution, and subjecting the resultant substrate to irradiation with a laser light of a 400 nm or less wavelength, to form a metal oxide on the substrate. According to that method, a metal oxide can be produced without applying a heat treatment at a high temperature of the degree adopted in the conventionally known application thermal decomposition method.

    摘要翻译: 公开了一种金属氧化物的制造方法,该方法包括以下步骤:将金属有机化合物(例如金属有机酸盐,金属乙酰丙酮络合物和具有6个或更多个碳原子的有机基团的金属醇盐) 在溶剂中以提供溶液状态,将溶液施加到基材上,干燥溶液,并使所得基板对波长为400nm以下的激光进行照射,以在基板上形成金属氧化物。 根据该方法,可以在常规已知的应用热分解方法中采用的高温下进行金属氧化物而不进行热处理。

    Manufacturing Method and Usage of Crystallized Metal Oxide Thin Film
    8.
    发明申请
    Manufacturing Method and Usage of Crystallized Metal Oxide Thin Film 有权
    结晶金属氧化物薄膜的制造方法和用途

    公开(公告)号:US20080035898A1

    公开(公告)日:2008-02-14

    申请号:US11836387

    申请日:2007-08-09

    IPC分类号: B05D3/06 C01B13/00

    摘要: Provided is a manufacturing method of a crystallized rare-earth thin films on a glass or a silicon substrate. This manufacturing method of a crystallized metal oxide thin film includes a step of retaining an metal organic thin film or a metal oxide film containing at least one type of rare-earth metal element selected from a group comprised of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu formed on a substrate at a temperature of 250 to 600° C., and a step of crystallizing the organic metal thin film or the metal oxide film while irradiating ultraviolet radiation having a wavelength of 200 nm or less.

    摘要翻译: 提供了在玻璃或硅基板上的结晶化稀土类薄膜的制造方法。 该结晶化金属氧化物薄膜的制造方法包括:保持金属有机薄膜或金属氧化物膜的工序,所述金属有机薄膜或金属氧化物膜含有选自Y,Dy,Sm,Gd中的至少一种稀土金属元素, 在250〜600℃的温度下在基板上形成的Ho,Eu,Tm,Tb,Er,Ce,Pr,Yb,La,Nd和Lu,以及将有机金属薄膜或金属氧化物 同时照射波长为200nm以下的紫外线。

    Oriented Perovskite Oxide Thin Film
    9.
    发明申请
    Oriented Perovskite Oxide Thin Film 有权
    定向钙钛矿氧化物薄膜

    公开(公告)号:US20130065065A1

    公开(公告)日:2013-03-14

    申请号:US13640760

    申请日:2011-04-12

    IPC分类号: C30B1/02 C30B1/10 C30B1/04

    摘要: A thin film which comprises an organic metal salt or an an alkoxide salt or an amorphous thin film is formed on a substrate, wherein each of the thin films enables the formation of a Dion-Jacobson perovskite-type metal oxide represented by the composition formula A(Bn−1MnO3n+1) (wherein n is a natural number of 2 or greater; A represents one or more monovalent cations selected from Na, K, Rb and Cs; B comprises one or more components selected from a trivalent rare earth ion, Bi, a divalent alkaline earth metal ion and a monovalent alkali metal ion; and M comprises one or more of Nb and Ta; wherein a solid solution may be formed with Ti and Zr) on a non-oriented substrate. The resulting product is maintained at the temperature between room temperature and 600° C.; and crystallization is achieved while irradiating the amorphous thin film or the thin film comprising the organic metal salt or the alkoxide salt on the substrate with ultraviolet light such as ultraviolet laser. In this manner, it becomes possible to produce an oriented Dion-Jacobson perovskite-type oxide thin film characterized in that thin film can be oriented on the substrate in a (001) direction.

    摘要翻译: 在基板上形成包含有机金属盐或醇盐或非晶态薄膜的薄膜,其中每个薄膜能够形成由组成式A表示的Dion-Jacobson钙钛矿型金属氧化物 (Bn-1MnO3n + 1)(其中n为2或更大的自然数; A表示选自Na,K,Rb和Cs中的一种或多种一价阳离子; B包含一种或多种选自三价稀土离子, Bi,二价碱土金属离子和一价碱金属离子; M包括Nb和Ta中的一种或多种;其中固溶体可以用Ti和Zr形成)在非取向基材上。 所得产物保持在室温至600℃之间的温度。 并且在用紫外线激光等紫外线照射基板上的非晶质薄膜或由有机金属盐或醇盐构成的薄膜的同时进行结晶化。 以这种方式,可以制备定向的Dion-Jacobson钙钛矿型氧化物薄膜,其特征在于薄膜可以在(001)方向上在基板上取向。