发明申请
US20120196452A1 METHOD TO INCREASE TENSILE STRESS OF SILICON NITRIDE FILMS USING A POST PECVD DEPOSITION UV CURE
有权
使用后PECVD沉积UV固化法增加硅酸钠膜的拉伸应力的方法
- 专利标题： METHOD TO INCREASE TENSILE STRESS OF SILICON NITRIDE FILMS USING A POST PECVD DEPOSITION UV CURE
- 专利标题（中）： 使用后PECVD沉积UV固化法增加硅酸钠膜的拉伸应力的方法
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申请号： US13365229申请日： 2012-02-02
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公开(公告)号： US20120196452A1公开(公告)日： 2012-08-02
- 发明人: Mihaela Balseanu , Michael S. Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
- 申请人： Mihaela Balseanu , Michael S. Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/318
- IPC分类号： H01L21/318
摘要：
High tensile stress in a deposited layer, such as a silicon nitride layer, may be achieved utilizing one or more techniques employed either alone or in combination. In one embodiment, a silicon nitride film having high tensile stress may be formed by depositing the silicon nitride film in the presence of a porogen. The deposited silicon nitride film may be exposed to at least one treatment selected from a plasma or ultraviolet radiation to liberate the porogen. The silicon nitride film may be densified such that a pore resulting from liberation of the porogen is reduced in size, and Si—N bonds in the silicon nitride film are strained to impart a tensile stress in the silicon nitride film. In another embodiment, tensile stress in a silicon nitride film may be enhanced by depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than about 400° C., and exposing the deposited silicon nitride film to ultraviolet radiation.
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