A photoelectric conversion device according to the present invention includes, between a pair of electrodes, an electron donor layer having an interdigitated shape in cross section comprising a stripe-like part in cross section and a base, a plurality of strip-like parts in cross section extending in a direction intersecting electrode main surfaces being formed at intervals in the stripe-like part in cross section; and an electron acceptor layer having an interdigitated shape in cross section comprising a stripe-like part in cross section and a base, a plurality of strip-like parts in cross section extending in a direction intersecting the electrode main surfaces being formed at intervals in the stripe-like part in cross section, the photoelectric conversion device further including an active layer in which the plurality of strip-like parts in cross section of the electron donor layer and the plurality of strip-like parts in cross section of the electron acceptor layer are alternately joined. A stripe width a of the stripe-like part in cross section of the electron donor layer and a stripe width b of the stripe-like part in cross section of the electron acceptor layer are both 5 to 100 nm. When a=b, a thickness c of the active layer is twice to 40 times as large as a (=b). When a≠b, the thickness c of the active layer is twice or more of one of a and b which is smaller and 40 times or less of one of a and b which is larger.