发明申请
- 专利标题： Controlling Pit Formation in a III-Nitride Device
- 专利标题（中）： 控制III-氮化物装置中的坑形成
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申请号： US13448453申请日： 2012-04-17
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公开(公告)号： US20120205691A1公开(公告)日： 2012-08-16
- 发明人: Sungsoo Yi , Nathan F. Gardner , Qi Laura Ye
- 申请人： Sungsoo Yi , Nathan F. Gardner , Qi Laura Ye
- 申请人地址： NL EINDHOVEN
- 专利权人： KONINKLIJKE PHILIPS ELECTRONICS N.V.
- 当前专利权人： KONINKLIJKE PHILIPS ELECTRONICS N.V.
- 当前专利权人地址： NL EINDHOVEN
- 主分类号： H01L33/22
- IPC分类号： H01L33/22 ; H01L33/32
摘要：
A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.
公开/授权文献
- US09012250B2 Controlling pit formation in a III-nitride device 公开/授权日：2015-04-21