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公开(公告)号:US09012250B2
公开(公告)日:2015-04-21
申请号:US13448453
申请日:2012-04-17
申请人: Sungsoo Yi , Nathan F. Gardner , Qi Laura Ye
发明人: Sungsoo Yi , Nathan F. Gardner , Qi Laura Ye
CPC分类号: H01L33/007 , H01L33/04 , H01L33/12 , H01S5/32341
摘要: A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.
摘要翻译: 一种器件包括:半导体结构,包括设置在n型区域和p型区域之间的III族氮化物发光层和设置在n型区域和p型区域之一内的多个层对。 每层对包括与InGaN层直接接触的InGaN层和凹坑填充层。 凹坑填充层可以填充形成在InGaN层中的凹坑。
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公开(公告)号:US20080178921A1
公开(公告)日:2008-07-31
申请号:US11843609
申请日:2007-08-22
申请人: Qi Laura Ye
发明人: Qi Laura Ye
IPC分类号: H01L35/02 , H01L35/34 , H01L21/441
摘要: An MOCVD process provides aligned p- and n- type nanowire arrays which are then filled with p- and n-type thermoelectric films to form the respective p-leg and n-leg of a thermoelectric device. The thermoelectric nanowire synthesis process is integrated with a photolithographic microfabrication process. The locations of the p- and n-type nanowire micro arrays are defined by photolithography. Metal contact pads at the bottom and top of these nanowire arrays which link the p- and n-type nanowires in series are defined and aligned by photolithography.
摘要翻译: MOCVD工艺提供对准的p型和n型纳米线阵列,然后用p型和n型热电膜填充以形成热电装置的相应的p型腿和n型腿。 热电纳米线合成工艺与光刻微加工过程相结合。 通过光刻法定义p型和n型纳米线微阵列的位置。 通过光刻法定义并排列将p型和n型纳米线串联连接的这些纳米线阵列的底部和顶部的金属接触焊盘。
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公开(公告)号:US20120205691A1
公开(公告)日:2012-08-16
申请号:US13448453
申请日:2012-04-17
申请人: Sungsoo Yi , Nathan F. Gardner , Qi Laura Ye
发明人: Sungsoo Yi , Nathan F. Gardner , Qi Laura Ye
CPC分类号: H01L33/007 , H01L33/04 , H01L33/12 , H01S5/32341
摘要: A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.
摘要翻译: 一种器件包括:半导体结构,包括设置在n型区域和p型区域之间的III族氮化物发光层和设置在n型区域和p型区域之一内的多个层对。 每层对包括与InGaN层直接接触的InGaN层和凹坑填充层。 凹坑填充层可以填充形成在InGaN层中的凹坑。
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公开(公告)号:US08183577B2
公开(公告)日:2012-05-22
申请号:US12495258
申请日:2009-06-30
申请人: Sungsoo Yi , Nathan F. Gardner , Qi Laura Ye
发明人: Sungsoo Yi , Nathan F. Gardner , Qi Laura Ye
IPC分类号: H01L29/72
CPC分类号: H01L33/007 , H01L33/04 , H01L33/12 , H01S5/32341
摘要: A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.
摘要翻译: 一种器件包括:半导体结构,包括设置在n型区域和p型区域之间的III族氮化物发光层和设置在n型区域和p型区域之一内的多个层对。 每层对包括与InGaN层直接接触的InGaN层和凹坑填充层。 凹坑填充层可以填充形成在InGaN层中的凹坑。
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公开(公告)号:US20100327256A1
公开(公告)日:2010-12-30
申请号:US12495258
申请日:2009-06-30
申请人: Sungsoo YI , Nathan F. GARDNER , Qi Laura Ye
发明人: Sungsoo YI , Nathan F. GARDNER , Qi Laura Ye
CPC分类号: H01L33/007 , H01L33/04 , H01L33/12 , H01S5/32341
摘要: A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.
摘要翻译: 一种器件包括:半导体结构,包括设置在n型区域和p型区域之间的III族氮化物发光层和设置在n型区域和p型区域之一内的多个层对。 每层对包括与InGaN层直接接触的InGaN层和凹坑填充层。 凹坑填充层可以填充形成在InGaN层中的凹坑。
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