Invention Application
- Patent Title: FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGIONS AND METHOD OF FABRICATION
- Patent Title (中): 具有窄带源和漏区的场效应晶体管和制造方法
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Application No.: US13453403Application Date: 2012-04-23
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Publication No.: US20120205729A1Publication Date: 2012-08-16
- Inventor: Robert S. Chau , Suman Datta , Jack Kavalieros , Justin K. Brask , Mark L. Doczy , Matthew Metz
- Applicant: Robert S. Chau , Suman Datta , Jack Kavalieros , Justin K. Brask , Mark L. Doczy , Matthew Metz
- Main IPC: H01L29/772
- IPC: H01L29/772
Abstract:
A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film formed in the silicon layer on opposite sides of the gate electrode.
Public/Granted literature
- US08368135B2 Field effect transistor with narrow bandgap source and drain regions and method of fabrication Public/Granted day:2013-02-05
Information query
IPC分类:
