发明申请
- 专利标题： FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGIONS AND METHOD OF FABRICATION
- 专利标题（中）： 具有窄带源和漏区的场效应晶体管和制造方法
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申请号： US13453403申请日： 2012-04-23
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公开(公告)号： US20120205729A1公开(公告)日： 2012-08-16
- 发明人: Robert S. Chau , Suman Datta , Jack Kavalieros , Justin K. Brask , Mark L. Doczy , Matthew Metz
- 申请人： Robert S. Chau , Suman Datta , Jack Kavalieros , Justin K. Brask , Mark L. Doczy , Matthew Metz
- 主分类号： H01L29/772
- IPC分类号： H01L29/772
摘要：
A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film formed in the silicon layer on opposite sides of the gate electrode.
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