发明申请
- 专利标题： GROWING COMPRESSIVELY STRAINED SILICON DIRECTLY ON SILICON AT LOW TEMPERATURES
- 专利标题（中）： 在低温下直接生长含硅的压敏硅
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申请号： US13037944申请日： 2011-03-01
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公开(公告)号： US20120205784A1公开(公告)日： 2012-08-16
- 发明人: Stephen W. Bedell , Bahman Hekmatshoartabari , Alexander Reznicek , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- 申请人： Stephen W. Bedell , Bahman Hekmatshoartabari , Alexander Reznicek , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/02
- IPC分类号： H01L29/02 ; H01L21/20
摘要：
Compressively strained silicon is epitaxially grown directly onto a silicon substrate at low temperature using hydrogen to engineer the strain level. Hydrogen dilution may be varied during such growth to provide a strain gradient.
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