发明申请
- 专利标题： NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR
- 专利标题（中）： 氮化物半导体元件及其制造方法
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申请号： US13503972申请日： 2011-03-15
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公开(公告)号： US20120211725A1公开(公告)日： 2012-08-23
- 发明人: Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Akihiro Isozaki
- 申请人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Akihiro Isozaki
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 优先权： JP2010-085982 20100402
- 国际申请： PCT/JP2011/001517 WO 20110315
- 主分类号： H01L33/06
- IPC分类号： H01L33/06 ; H01L21/20 ; H01L29/15
摘要：
A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m-plane by an angle of not less than 1° and not more than 5°; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlxInyGazN (where x+y+z=1, x≧0, y≧0, and z≧0) layer 26. The electrode 30 includes a Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.
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