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1.发明授权Nitride semiconductor element having electrode on m-plane and method for producing the same 有权在m面上具有电极的氮化物半导体元件及其制造方法公开(公告)号：US08441108B2
公开(公告)日：2013-05-14
申请号：US12993305
申请日：2010-03-16
IPC分类号： H01L29/04
CPC分类号： H01L33/40 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/16 , H01L33/32 , H01L2933/0016
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and a metal layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译： 氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体层叠结构体20上的电极30.电极30包括Zn层32和设置在Zn层32上的金属层34.Zn层32与p型半导体区域的表面接触 半导体多层结构20。
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2.发明申请公开(公告)号：US20130015427A1
公开(公告)日：2013-01-17
申请号：US13618436
申请日：2012-09-14
IPC分类号： H01L33/04
CPC分类号： H01L33/40 , H01L33/32 , H01S5/0425 , H01S5/3202 , H01S5/32341
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译： 氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体层叠结构体20上的电极30.电极30包括设置在Mg层32上的Mg层32和Ag层34.Mg层32与p型半导体区域的表面接触 半导体多层结构20。
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公开(公告)号：US20130001513A1
公开(公告)日：2013-01-03
申请号：US13610159
申请日：2012-09-11
IPC分类号： H01L33/04
CPC分类号： H01L21/02609 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L24/14 , H01L33/32 , H01L33/40 , H01L2924/12041 , H01L2924/12042 , H01L2933/0016 , H01S5/0425 , H01S5/32341 , H01L2924/00
摘要： A nitride-based semiconductor device includes: a semiconductor multilayer structure 20 including a p-type GaN-based semiconductor region whose surface 12 is inclined by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is provided on the p-type semiconductor region. The p-type semiconductor region is made of an AlxInyGazN (where x+y+z=1, x≧0, y≧0, and z≧0) layer 26. The electrode 30 includes a Zn layer 32, and the Zn layer 32 is in contact with the surface of the p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译： 氮化物类半导体器件包括：半导体层叠结构20，其包括表面12倾斜不小于1°且不大于5°的p型GaN基半导体区域，或者主表面具有多个 的平面台阶; 以及设置在p型半导体区域上的电极30。 p型半导体区域由Al x In y Ga z N（其中x + y + z = 1，x≥0，y≥0和z≥0）层26制成。电极30包括Zn层32，Zn层32 32与半导体多层结构体20的p型半导体区域的表面接触。
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公开(公告)号：US20120326161A1
公开(公告)日：2012-12-27
申请号：US13597869
申请日：2012-08-29
CPC分类号： H01L33/405 , H01L21/28575 , H01L24/14 , H01L29/045 , H01L29/452 , H01L33/16 , H01L33/32 , H01L2924/12041 , H01L2924/12042 , H01L2933/0016 , H01L2924/00
摘要： An exemplary nitride-based semiconductor device includes: a semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlxInyGazN (where x+y+z=1, x≧0, y≧0, and z>0) layer 26. The electrode 30 includes a Zn layer 32 and a Ag layer 34 provided on the Zn layer 32. The Zn layer is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译： 示例性的氮化物基半导体器件包括：半导体多层结构20，其包括具有从m面倾斜不小于1°且不大于5°的角度的表面12的p型半导体区域，或者 主表面具有多个m平面步骤; 以及设置在p型半导体区域上的电极30。 p型半导体区域由Al x In y Ga z N（其中x + y + z = 1，x≥0，y≥0和z> 0）层26形成。电极30包括Zn层32和Ag层34 设置在Zn层32上.Zn层与半导体多层结构体20的p型半导体区域的表面12接触。
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公开(公告)号：US08164109B2
公开(公告)日：2012-04-24
申请号：US13167664
申请日：2011-06-23
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/16 , H01L33/32 , H01L2933/0016
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and a metal layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译： 氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体层叠结构体20上的电极30.电极30包括Zn层32和设置在Zn层32上的金属层34.Zn层32与p型半导体区域的表面接触 半导体多层结构20。
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6.发明授权Nitride semiconductor element having m-plane angled semiconductor region and electrode including Mg and Ag 有权具有m面成角度半导体区域的氮化物半导体元件和包含Mg和Ag的电极公开(公告)号：US08933543B2
公开(公告)日：2015-01-13
申请号：US13503972
申请日：2011-03-15
IPC分类号： H01L33/16 , H01L21/02 , H01L33/40 , H01L23/532 , H01L33/00 , H01L33/32 , H01S5/042 , H01S5/32 , H01S5/323
CPC分类号： H01L21/02579 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L23/53247 , H01L33/0075 , H01L33/16 , H01L33/32 , H01L33/40 , H01L2224/13 , H01L2924/12032 , H01L2933/0016 , H01S5/0425 , H01S5/3202 , H01S5/32341 , H01L2924/00
摘要： A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m-plane by an angle of not less than 1° and not more than 5°; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlxInyGazN (where x+y+z=1, x≧0, y≧0, and z≧0) layer 26. The electrode 30 includes a Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译： 本发明的氮化物系半导体器件包括：氮化物系半导体多层结构体20，其具有p型半导体区域，表面12从m面倾斜不小于1°的角度， 超过5°; 以及设置在p型半导体区域上的电极30。 p型半导体区域由Al x In y Ga z N（其中x + y + z = 1，x≥0，y≥0和z≥0）层26形成。电极30包括Mg层32和Ag层34 设置在Mg层32上.Mg层32与半导体多层结构体20的p型半导体区域的表面12接触。
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7.发明授权Method for fabricating nitride-based semiconductor device having electrode on m-plane 有权一种在m面上具有电极的氮化物基半导体器件的制造方法公开(公告)号：US08334199B2
公开(公告)日：2012-12-18
申请号：US12937758
申请日：2010-03-17
IPC分类号： H01L21/3205
CPC分类号： H01L21/28575 , H01L33/16 , H01L33/32 , H01L33/40
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译： 氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体多层结构体20上的电极30.电极30包括Zn层32和设置在Zn层32上的Ag层34.Zn层32与p型半导体区域的表面接触 半导体多层结构20。
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公开(公告)号：US20110253977A1
公开(公告)日：2011-10-20
申请号：US13167064
申请日：2011-06-23
IPC分类号： H01L33/06 , H01L29/201 , H01L21/263
CPC分类号： H01L21/28575 , H01L33/16 , H01L33/32 , H01L33/40
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译： 氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体多层结构体20上的电极30.电极30包括Zn层32和设置在Zn层32上的Ag层34.Zn层32与p型半导体区域的表面接触 半导体多层结构20。
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公开(公告)号：US20110037089A1
公开(公告)日：2011-02-17
申请号：US12937758
申请日：2010-03-17
CPC分类号： H01L21/28575 , H01L33/16 , H01L33/32 , H01L33/40
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
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公开(公告)号：US09252330B2
公开(公告)日：2016-02-02
申请号：US13813792
申请日：2011-08-05
申请人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
发明人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m plane nitride semiconductor layer and which is interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run substantially parallel to the a-axis direction of the m plane nitride semiconductor layer.
摘要翻译： 根据本发明的半导体发光元件包括：n型氮化物半导体层21; p型氮化物半导体层23; 包括m面氮化物半导体层并且介于n型氮化物半导体层和p型氮化物半导体层之间的有源层区域22; 与n型氮化物半导体层电连接的n型电极30; 与p型氮化物半导体层电连接的p型电极40; 从该元件中提取出在有源层区域中产生的偏振光的发光面; 以及条形结构50，其被设置用于发光面，并且具有大致平行于m面氮化物半导体层的a轴方向延伸的多个突起。
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