发明申请
- 专利标题： Low Temperature High Strength Metal Stack for Die Attachment
- 专利标题（中）： 用于模具附件的低温高强度金属叠层
-
申请号： US13361569申请日： 2012-01-30
-
公开(公告)号： US20120211793A1公开(公告)日： 2012-08-23
- 发明人: Michael John Bergmann , Christopher D. Williams , Kevin Shawne Schneider , Kevin Haberern , Matthew Donofrlo
- 申请人： Michael John Bergmann , Christopher D. Williams , Kevin Shawne Schneider , Kevin Haberern , Matthew Donofrlo
- 主分类号： H01L33/62
- IPC分类号： H01L33/62
摘要：
A light emitting diode structure includes a diode region and a metal stack on the diode region. The metal stack includes a barrier layer on the diode region and a bonding layer on the barrier layer. The barrier layer is between the bonding layer and the diode region. The bonding layer includes gold, tin and nickel. A weight percentage of tin in the bonding layer is greater than 20 percent and a weight percentage of gold in the bonding layer is less than about 75 percent. A weight percentage of nickel in the bonding layer may be greater than 10 percent.
公开/授权文献
信息查询
IPC分类:
