A method and structure for forming a semiconductor device, for example a device including a wafer chip scale package (WCSP), can include the formation of at least one conductive layer which contacts a bond pad. The at least one conductive layer can be patterned using a first mask, then a passivation layer can be formed over the patterned at least one conductive layer. The passivation layer can be patterned using a second mask to expose the at least one conductive layer, then a conductive layer such as a solder ball, conductive bump, metal-filled paste, or another conductor is formed on the at least one conductive layer. The method can result in a structure which is formed using a reduced number of mask steps.